Determination of elastic parameters of Si3N4thin films by means of anumerical approach and bulge tests

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F19%3A00504377" target="_blank" >RIV/68081731:_____/19:00504377 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68081723:_____/19:00504377 RIV/00216305:26620/19:PU135478

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0040609018308484?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0040609018308484?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2018.12.039" target="_blank" >10.1016/j.tsf.2018.12.039</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Determination of elastic parameters of Si3N4thin films by means of anumerical approach and bulge tests

Popis výsledku v původním jazyce

This paper describes and applies a methodology to determine the elastic properties of freestanding thin mem-branes by means of a bulge test and a numerical approach. The numerical procedure is based on the combinationof two standard methods i.e. finite element analysis and classical analytical solutions to calculate elasticproperties of thin films. Bulge tests were conducted on silicon nitride (Si3N4) monolayer of 2 × 2mm(square)and 3.5 × 1.5mm(rectangular) membranes with the aim to determine elastics properties (Young's modulus (E)and Poison's ratio (v)) that define the load-deflection curves of both membranes. With this purpose, an errorfunction was constructed for each membrane which involved finite element solutions, analytical solutions andexperimental measurements. Error functions were found and minimized by mapping a set of elastic parametersfor the two membranes (square and rectangular). A unique solution was determined in the intersection of bothlinear approximations, obtaining 236GPaforEand 0.264 forv. It is well known that in a traditional bulge testanalysis only one of both biaxial modulus can be determined and not a combination ofEandv. Numerical resultsshow that calculated load-deflection curves agree well with the measurements obtained for both square andrectangular membranes experimentally. The proposed methodology is only applicable in thin films with elasticbehavior, however generalization for more complicated geometries is possible.

Název v anglickém jazyce

Determination of elastic parameters of Si3N4thin films by means of anumerical approach and bulge tests

Popis výsledku anglicky

This paper describes and applies a methodology to determine the elastic properties of freestanding thin mem-branes by means of a bulge test and a numerical approach. The numerical procedure is based on the combinationof two standard methods i.e. finite element analysis and classical analytical solutions to calculate elasticproperties of thin films. Bulge tests were conducted on silicon nitride (Si3N4) monolayer of 2 × 2mm(square)and 3.5 × 1.5mm(rectangular) membranes with the aim to determine elastics properties (Young's modulus (E)and Poison's ratio (v)) that define the load-deflection curves of both membranes. With this purpose, an errorfunction was constructed for each membrane which involved finite element solutions, analytical solutions andexperimental measurements. Error functions were found and minimized by mapping a set of elastic parametersfor the two membranes (square and rectangular). A unique solution was determined in the intersection of bothlinear approximations, obtaining 236GPaforEand 0.264 forv. It is well known that in a traditional bulge testanalysis only one of both biaxial modulus can be determined and not a combination ofEandv. Numerical resultsshow that calculated load-deflection curves agree well with the measurements obtained for both square andrectangular membranes experimentally. The proposed methodology is only applicable in thin films with elasticbehavior, however generalization for more complicated geometries is possible.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

672

Číslo periodika v rámci svazku

FEB

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

9

Strana od-do

66-74

Kód UT WoS článku

000456726000011

EID výsledku v databázi Scopus

2-s2.0-85059843428