Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F20%3A00525645" target="_blank" >RIV/68081731:_____/20:00525645 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216305:26620/20:PU135027

Výsledek na webu

<a href="https://www.mdpi.com/2072-666X/11/2/143" target="_blank" >https://www.mdpi.com/2072-666X/11/2/143</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/mi11020143" target="_blank" >10.3390/mi11020143</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

Popis výsledku v původním jazyce

In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d(33) of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of approximate to 330 degrees C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.

Název v anglickém jazyce

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

Popis výsledku anglicky

In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d(33) of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of approximate to 330 degrees C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Micromachines

ISSN

2072-666X

e-ISSN

—

Svazek periodika

11

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

10

Strana od-do

143

Kód UT WoS článku

000520181500032

EID výsledku v databázi Scopus

2-s2.0-85081204415