Effect of native oxide on the crystal orientation contrast in SEM micrographs obtained at hundreds, tens and units of eV

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F21%3A00549396" target="_blank" >RIV/68081731:_____/21:00549396 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0304399120302928?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0304399120302928?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.ultramic.2020.113144" target="_blank" >10.1016/j.ultramic.2020.113144</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of native oxide on the crystal orientation contrast in SEM micrographs obtained at hundreds, tens and units of eV

Popis výsledku v původním jazyce

This paper aims to elucidate the effect of native air-formed oxide on the crystallographic contrast between differently oriented copper grains in scanning electron microscope images obtained at energies from 0 eV up to 1 keV. The contrast between the Cu grains is strongly affected by the presence of native oxide. The crystallographic orientation contrast between the grains without covering the native oxide layer is relatively weak at hundreds of eV, negligible at tens of eV, and dramatically increases at energies below 10 eV. At extremely low landing energies, say below similar to 1 eV, the surface potential differences caused by work function variations between the differently oriented Cu grains affect the primary electrons, which enables us to obtain the micrographs with high crystallographic contrast. This contrast becomes surprisingly visible even if the grains are covered by a several nm thick native oxide layer. The presence of the native air-formed oxide layer on the Cu surface is inconsiderable for the contrast formation at energies close to the mirror conditions (< 1 eV). The surface potential differences originating in the substrate can affect the incident electrons through the native oxide film situated on the Cu surface. Scanning low-energy electron microscopy is a powerful tool for mapping local work function differences with a spatial resolution slightly better than 30 nm due to high sensitivity to local electrical potentials.

Název v anglickém jazyce

Effect of native oxide on the crystal orientation contrast in SEM micrographs obtained at hundreds, tens and units of eV

Popis výsledku anglicky

This paper aims to elucidate the effect of native air-formed oxide on the crystallographic contrast between differently oriented copper grains in scanning electron microscope images obtained at energies from 0 eV up to 1 keV. The contrast between the Cu grains is strongly affected by the presence of native oxide. The crystallographic orientation contrast between the grains without covering the native oxide layer is relatively weak at hundreds of eV, negligible at tens of eV, and dramatically increases at energies below 10 eV. At extremely low landing energies, say below similar to 1 eV, the surface potential differences caused by work function variations between the differently oriented Cu grains affect the primary electrons, which enables us to obtain the micrographs with high crystallographic contrast. This contrast becomes surprisingly visible even if the grains are covered by a several nm thick native oxide layer. The presence of the native air-formed oxide layer on the Cu surface is inconsiderable for the contrast formation at energies close to the mirror conditions (< 1 eV). The surface potential differences originating in the substrate can affect the incident electrons through the native oxide film situated on the Cu surface. Scanning low-energy electron microscopy is a powerful tool for mapping local work function differences with a spatial resolution slightly better than 30 nm due to high sensitivity to local electrical potentials.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/TN01000008" target="_blank" >TN01000008: Centrum elektronové a fotonové optiky</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Ultramicroscopy

ISSN

0304-3991

e-ISSN

1879-2723

Svazek periodika

220

Číslo periodika v rámci svazku

January

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

113144

Kód UT WoS článku

000600833500006

EID výsledku v databázi Scopus

2-s2.0-85093933635