Nonlinear optical properties of silicon nanocrystals studied by ultrafast spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F09%3A00331262" target="_blank" >RIV/68378271:_____/09:00331262 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Nonlinear optical properties of silicon nanocrystals studied by ultrafast spectroscopy

Popis výsledku v původním jazyce

Starting with the demonstration of efficient photoluminescence of silicon nanocrystals, nanocrystalline silicon is ranked among the most studied semiconductor materials. Its main prospect is assigned to the possibility of constructing a silicon based laser, which could be easily integrated into present microelectronic chips. To attain higher optical gain it is necessary to investigate and identify processes in Si NCs. We investigated the processes extending time scales from hundreds of femtosecond to miliseconds, namely by up-conversion technique, by a streak camera and a PMT. We studied the processes in various Si NC systems, including also organically passivated NCs which allowed us to distinguish between intrinsic Si NC properties and effects of SiSiO2 interface. Time-resolved spectroscopy were extended by optical gain measurements and measurements of nonlinear properties by using two-photon absorption.

Název v anglickém jazyce

Nonlinear optical properties of silicon nanocrystals studied by ultrafast spectroscopy

Popis výsledku anglicky

Starting with the demonstration of efficient photoluminescence of silicon nanocrystals, nanocrystalline silicon is ranked among the most studied semiconductor materials. Its main prospect is assigned to the possibility of constructing a silicon based laser, which could be easily integrated into present microelectronic chips. To attain higher optical gain it is necessary to investigate and identify processes in Si NCs. We investigated the processes extending time scales from hundreds of femtosecond to miliseconds, namely by up-conversion technique, by a streak camera and a PMT. We studied the processes in various Si NC systems, including also organically passivated NCs which allowed us to distinguish between intrinsic Si NC properties and effects of SiSiO2 interface. Time-resolved spectroscopy were extended by optical gain measurements and measurements of nonlinear properties by using two-photon absorption.

Druh

O - Ostatní výsledky

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů