Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00387856" target="_blank" >RIV/68378271:_____/12:00387856 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/12:00387856

Výsledek na webu

<a href="http://dx.doi.org/10.1504/IJNT.2012.046751" target="_blank" >http://dx.doi.org/10.1504/IJNT.2012.046751</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1504/IJNT.2012.046751" target="_blank" >10.1504/IJNT.2012.046751</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs

Popis výsledku v původním jazyce

Both crystallographically oriented and current line oriented pore networks in InP and GaAs are created by electrochemical dissolution. Heat treatment of InP pores at 650 degrees C and of GaAs pores at 700-850 degrees C converts them into microcavities maintaining almost the same crystallographic direction. As a transition between micro/nanopores and micro cavities the lamellar structures are obtained. Mass transport is responsible for the pore conversion. The effect of 'anion' vapour pressure is provedto be crucial for the microcavity formation since it influences the mass transport during the heat treatment. Electron microscopy and photoluminescence experiments reveal the absence of significant extended defects, both after the formation of pores andcavities. The capability of improved structural quality of homo-and hetero-epitaxially overgrown films on porous InP is demonstrated by liquid phase epitaxy growth of InP and InAs. Overgrowth of the porous GaAs substrates by ternary GaInA

Název v anglickém jazyce

Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs

Popis výsledku anglicky

Both crystallographically oriented and current line oriented pore networks in InP and GaAs are created by electrochemical dissolution. Heat treatment of InP pores at 650 degrees C and of GaAs pores at 700-850 degrees C converts them into microcavities maintaining almost the same crystallographic direction. As a transition between micro/nanopores and micro cavities the lamellar structures are obtained. Mass transport is responsible for the pore conversion. The effect of 'anion' vapour pressure is provedto be crucial for the microcavity formation since it influences the mass transport during the heat treatment. Electron microscopy and photoluminescence experiments reveal the absence of significant extended defects, both after the formation of pores andcavities. The capability of improved structural quality of homo-and hetero-epitaxially overgrown films on porous InP is demonstrated by liquid phase epitaxy growth of InP and InAs. Overgrowth of the porous GaAs substrates by ternary GaInA

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP108%2F10%2F0253" target="_blank" >GAP108/10/0253: Kompenzace neizoperiodičnosti v heteropřechodech na mikro a nanoporézních polovodičích A3B5 a depozice kovů a polovodičů do mikropórů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

International Journal of Nanotechnology

ISSN

1475-7435

e-ISSN

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Svazek periodika

9

Číslo periodika v rámci svazku

8-9

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

14

Strana od-do

732-745

Kód UT WoS článku

000303800500006

EID výsledku v databázi Scopus

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