Effects of sintering temperature on the internal barrier layer capacitor (IBLC) structure in CaCu3Ti4O12 (CCTO) ceramics
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00389430" target="_blank" >RIV/68378271:_____/12:00389430 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1016/j.jeurceramsoc.2012.03.040" target="_blank" >http://dx.doi.org/10.1016/j.jeurceramsoc.2012.03.040</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jeurceramsoc.2012.03.040" target="_blank" >10.1016/j.jeurceramsoc.2012.03.040</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Effects of sintering temperature on the internal barrier layer capacitor (IBLC) structure in CaCu3Ti4O12 (CCTO) ceramics
Popis výsledku v původním jazyce
The formation of the internal barrier layer capacitor (IBLC) structure in CaCu3Ti4O12 (CCTO) ceramics was found to be facilitated by the ceramic heat treatment. Electrically insulating grain boundary (GB) and semi-conducting grain interior areas were characterized by impedance spectroscopy to monitor the evolution of the IBLC structure with increasing sintering temperature TS (975?1100 C). The intrinsic bulk and GB permittivity increased by factors of2 and 300, respectively and the bulk resistivity decreased by a factor of103. These trends were accompanied by increased Cu segregation from the CCTO ceramics as detected by scanning electron microscopy and quantitative energy dispersive analysis of X-rays. The chemical changes due to possible Cu-loss in CCTO ceramics with increasing TS are small and beyond the detection limits of X-ray absorption spectroscopy near Cu and Ti K-edges and Raman Spectroscopy.
Název v anglickém jazyce
Effects of sintering temperature on the internal barrier layer capacitor (IBLC) structure in CaCu3Ti4O12 (CCTO) ceramics
Popis výsledku anglicky
The formation of the internal barrier layer capacitor (IBLC) structure in CaCu3Ti4O12 (CCTO) ceramics was found to be facilitated by the ceramic heat treatment. Electrically insulating grain boundary (GB) and semi-conducting grain interior areas were characterized by impedance spectroscopy to monitor the evolution of the IBLC structure with increasing sintering temperature TS (975?1100 C). The intrinsic bulk and GB permittivity increased by factors of2 and 300, respectively and the bulk resistivity decreased by a factor of103. These trends were accompanied by increased Cu segregation from the CCTO ceramics as detected by scanning electron microscopy and quantitative energy dispersive analysis of X-rays. The chemical changes due to possible Cu-loss in CCTO ceramics with increasing TS are small and beyond the detection limits of X-ray absorption spectroscopy near Cu and Ti K-edges and Raman Spectroscopy.
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BM - Fyzika pevných látek a magnetismus
OECD FORD obor
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Návaznosti výsledku
Projekt
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Návaznosti
Z - Vyzkumny zamer (s odkazem do CEZ)
Ostatní
Rok uplatnění
2012
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of the European Ceramic Society
ISSN
0955-2219
e-ISSN
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Svazek periodika
32
Číslo periodika v rámci svazku
12
Stát vydavatele periodika
GB - Spojené království Velké Británie a Severního Irska
Počet stran výsledku
11
Strana od-do
3313-3323
Kód UT WoS článku
000306298300034
EID výsledku v databázi Scopus
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