Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00392283" target="_blank" >RIV/68378271:_____/13:00392283 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2012.08.007" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2012.08.007</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2012.08.007" target="_blank" >10.1016/j.jcrysgro.2012.08.007</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Popis výsledku v původním jazyce

We have grown new InAs/GaAs quantum dot (QD) structures with graded Sb concentration of GaAs1-xSbx strain reducing layer (SRL). New types of GaAsSb SRLs with graded concentration of Sb are theoretically and experimentally studied. We compare properties of three different Sb concentration gradients in SRL, constant, increasing and decreasing during the growth. Both types of non-constant gradients help us to prevent transition of the InAs(QD)/GaAsSb(SRL) heterojunction from type I to type II, to increaseemission wavelength and to retain high luminescence intensity of these types of QD structures. Comparison of photoluminescence of samples with different concentration gradients and similar average Sb concentration in SRLs is shown. The longest wavelengthof type I ground state transition was achieved on sample with decreasing gradation of Sb content in SRL - 1399 nm (0.886 eV).

Název v anglickém jazyce

Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Popis výsledku anglicky

We have grown new InAs/GaAs quantum dot (QD) structures with graded Sb concentration of GaAs1-xSbx strain reducing layer (SRL). New types of GaAsSb SRLs with graded concentration of Sb are theoretically and experimentally studied. We compare properties of three different Sb concentration gradients in SRL, constant, increasing and decreasing during the growth. Both types of non-constant gradients help us to prevent transition of the InAs(QD)/GaAsSb(SRL) heterojunction from type I to type II, to increaseemission wavelength and to retain high luminescence intensity of these types of QD structures. Comparison of photoluminescence of samples with different concentration gradients and similar average Sb concentration in SRLs is shown. The longest wavelengthof type I ground state transition was achieved on sample with decreasing gradation of Sb content in SRL - 1399 nm (0.886 eV).

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP102%2F10%2F1201" target="_blank" >GAP102/10/1201: Kvantové tečky pro detektory a jiné součástky</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

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Svazek periodika

370

Číslo periodika v rámci svazku

MAY

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

4

Strana od-do

303-306

Kód UT WoS článku

000317271000066

EID výsledku v databázi Scopus

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