Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00396224" target="_blank" >RIV/68378271:_____/13:00396224 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61989592:15310/13:33145817

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2013.06.070" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2013.06.070</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2013.06.070" target="_blank" >10.1016/j.tsf.2013.06.070</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates

Popis výsledku v původním jazyce

TiO2 filmswere deposited by reactive direct currentmagnetron sputtering on conductive and semiconductive Si as well as on dielectric quartz substrates at different negative substrate biases generated by radio-frequency (RF) power applied to the substrateholder. The mechanical properties of the films (depth sensing indentation) were examined in dependence on the film structure (X-ray diffraction and Raman spectroscopy). Phase analysis and hardness data imply that RF induced self-bias on the upper surface of quartz substrate is smaller in comparison to that on the surface of the semiconductive and especially conductive Si substrate. The rutile phase still grows after the RF power is switched off. The rutile grain size increaseswhile hardness decreases in this case. Micro-Raman spectroscopy of residual indents in the films with anatase structure points out on the more dense high pressure TiO2-II structure formed during the indentation.

Název v anglickém jazyce

Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates

Popis výsledku anglicky

TiO2 filmswere deposited by reactive direct currentmagnetron sputtering on conductive and semiconductive Si as well as on dielectric quartz substrates at different negative substrate biases generated by radio-frequency (RF) power applied to the substrateholder. The mechanical properties of the films (depth sensing indentation) were examined in dependence on the film structure (X-ray diffraction and Raman spectroscopy). Phase analysis and hardness data imply that RF induced self-bias on the upper surface of quartz substrate is smaller in comparison to that on the surface of the semiconductive and especially conductive Si substrate. The rutile phase still grows after the RF power is switched off. The rutile grain size increaseswhile hardness decreases in this case. Micro-Raman spectroscopy of residual indents in the films with anatase structure points out on the more dense high pressure TiO2-II structure formed during the indentation.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Svazek periodika

542

Číslo periodika v rámci svazku

Sept

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

9

Strana od-do

91-99

Kód UT WoS článku

000323859400015

EID výsledku v databázi Scopus

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