Static and dynamic VHF-deposition of microcrystalline silicon at 140 MHz with rates up to 2.5 nm/s

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Static and dynamic VHF-deposition of microcrystalline silicon at 140 MHz with rates up to 2.5 nm/s

Popis výsledku v původním jazyce

Microcrystalline silicon thin-film solar cells were deposited by VHF-PECVD at 140 MHz with absorber layer deposition rates up to 2.5 nm/s by a combination of very high plasma excitation frequencies (140 MHz) and high power high pressure deposition. The homogeneity of the deposition is ensured by the linear plasma source concept combined with a dynamic deposition process (moving substrates). High efficiencies of 9.3 % (9.6 % with AR coating) have been achieved at a deposition rate of 0.8 nm/s. At higherdeposition rates (2.5 nm/s) the efficiency drops to 8.3 % (8.6 % with AR coating) although the absorber layer defect density is equal to the low rate material as was measured by PDS/FTPS. On the other hand the high rate material exhibits a pronounced crack formation in the absorber layer as was observed in SEM cross section images. This study investigates in how far the effect of cracks can be mitigated by different approaches, e.g. using ?c-SiOx doped layers.

Název v anglickém jazyce

Static and dynamic VHF-deposition of microcrystalline silicon at 140 MHz with rates up to 2.5 nm/s

Popis výsledku anglicky

Microcrystalline silicon thin-film solar cells were deposited by VHF-PECVD at 140 MHz with absorber layer deposition rates up to 2.5 nm/s by a combination of very high plasma excitation frequencies (140 MHz) and high power high pressure deposition. The homogeneity of the deposition is ensured by the linear plasma source concept combined with a dynamic deposition process (moving substrates). High efficiencies of 9.3 % (9.6 % with AR coating) have been achieved at a deposition rate of 0.8 nm/s. At higherdeposition rates (2.5 nm/s) the efficiency drops to 8.3 % (8.6 % with AR coating) although the absorber layer defect density is equal to the low rate material as was measured by PDS/FTPS. On the other hand the high rate material exhibits a pronounced crack formation in the absorber layer as was observed in SEM cross section images. This study investigates in how far the effect of cracks can be mitigated by different approaches, e.g. using ?c-SiOx doped layers.

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the 29th European Photovoltaic Energy Conference and Exhibition

ISBN

3-936338-34-5

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

1917-1920

Název nakladatele

WIP

Místo vydání

Berlin

Místo konání akce

Amsterdam

Datum konání akce

22. 9. 2014

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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