High efficiency high rate microcrystalline silicon thin-film solar cells deposited at plasma excitation frequencies larger than 100 MHz

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00456582" target="_blank" >RIV/68378271:_____/15:00456582 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.solmat.2015.07.014" target="_blank" >http://dx.doi.org/10.1016/j.solmat.2015.07.014</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.solmat.2015.07.014" target="_blank" >10.1016/j.solmat.2015.07.014</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High efficiency high rate microcrystalline silicon thin-film solar cells deposited at plasma excitation frequencies larger than 100 MHz

Popis výsledku v původním jazyce

Microcrystalline silicon thin-film solar cells were fabricated at high absorber layer deposition rates from 1.0 up to 2.5 nm/s. High efficiencies of 9.6% (1.0 nm/s) and 8.6% (2.5 nm/s) were achieved using a very high frequency (VHF) of 140 MHz for the deposition of all silicon layers (p?i?n). Using such a high frequency in the VHF band is unique in the field of thin-film silicon solar cells. The efficiencies obtained especially at very high rates belong to the highest reported efficiencies so far for this technology. This shows that VHF deposition with frequencies larger than 100 MHz is very well suited for a highly productive solar cell fabrication. The VHF power homogeneity problem can be solved by using for example the linear plasma source concept developed at FAP GmbH/TU-Dresden. We show that the efficiency at very high rates of 2.5 nm/s is limited by an increased crack formation in the absorber layer.

Název v anglickém jazyce

High efficiency high rate microcrystalline silicon thin-film solar cells deposited at plasma excitation frequencies larger than 100 MHz

Popis výsledku anglicky

Microcrystalline silicon thin-film solar cells were fabricated at high absorber layer deposition rates from 1.0 up to 2.5 nm/s. High efficiencies of 9.6% (1.0 nm/s) and 8.6% (2.5 nm/s) were achieved using a very high frequency (VHF) of 140 MHz for the deposition of all silicon layers (p?i?n). Using such a high frequency in the VHF band is unique in the field of thin-film silicon solar cells. The efficiencies obtained especially at very high rates belong to the highest reported efficiencies so far for this technology. This shows that VHF deposition with frequencies larger than 100 MHz is very well suited for a highly productive solar cell fabrication. The VHF power homogeneity problem can be solved by using for example the linear plasma source concept developed at FAP GmbH/TU-Dresden. We show that the efficiency at very high rates of 2.5 nm/s is limited by an increased crack formation in the absorber layer.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/7E12029" target="_blank" >7E12029: Accelerated development and prototyping of nano-technology-based high-efficiency thin-film silicon solar modules ("Fast Track")</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Solar Energy Materials and Solar Cells

ISSN

0927-0248

e-ISSN

—

Svazek periodika

143

Číslo periodika v rámci svazku

Dec

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

347-353

Kód UT WoS článku

000364250200045

EID výsledku v databázi Scopus

2-s2.0-84938230094