Defect studies of thin ZnO films prepared by pulsed laser deposition

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00441457" target="_blank" >RIV/68378271:_____/14:00441457 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/14:10285862

Výsledek na webu

<a href="http://dx.doi.org/10.1088/1742-6596/505/1/012021" target="_blank" >http://dx.doi.org/10.1088/1742-6596/505/1/012021</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1742-6596/505/1/012021" target="_blank" >10.1088/1742-6596/505/1/012021</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Defect studies of thin ZnO films prepared by pulsed laser deposition

Popis výsledku v původním jazyce

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fusedsilica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

Název v anglickém jazyce

Defect studies of thin ZnO films prepared by pulsed laser deposition

Popis výsledku anglicky

Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fusedsilica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/GAP108%2F11%2F0958" target="_blank" >GAP108/11/0958: Výzkum bodových defektů v ZnO a studium jejich interakce s vodíkem a dusíkem</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Journal of Physics: Conference Series

ISBN

—

ISSN

1742-6588

e-ISSN

—

Počet stran výsledku

4

Strana od-do

"012021-1"-"012021-4"

Název nakladatele

IOP Publishing Ltd

Místo vydání

Bristol

Místo konání akce

München

Datum konání akce

15. 9. 2013

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000338216500021