Synthesis of Si-NWs by PECVD using Sn as catalyst on TCO thin film for optoelectronic devicies

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00511234" target="_blank" >RIV/68378271:_____/14:00511234 - isvavai.cz</a>

Výsledek na webu

<a href="http://hdl.handle.net/11104/0301556" target="_blank" >http://hdl.handle.net/11104/0301556</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/2043-6262/5/4/045011" target="_blank" >10.1088/2043-6262/5/4/045011</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Synthesis of Si-NWs by PECVD using Sn as catalyst on TCO thin film for optoelectronic devicies

Popis výsledku v původním jazyce

In this paper we focus on silicon nanowires (Si-NWs) which were fabricated on transparent conductive substrates (TCO) by plasma-enhanced chemical vapor deposition (PECVD) method using Sn as stimulated catalyst metal. TCO which we used are ZnO fabricated by direct current (dc) sputtering. Property of ZnO thin film was investigated by x-ray diffraction (XRD), volt-ohm-miliampere (VOM) meter, and Stylus method. In order to grow Si-NWs using PECVD we need to use Sn as catalyst to synthesize Si-NWs. Sn nanoparticles were fabricated by high vacuum evaporation system with SenVac thin film controller. Size and density of nanoparticles (NPs) were investigated by scanning electron microscope (SEM). The influence of the thickness and forming Sn NPs was studied. In particular, the factors affecting the formation of Si-NWs such as temperature and rate of gas were examined. Si-NWs' properties were investigated by SEM, Raman spectroscopy and energy dispersive x-ray (EDX) spectrocopyn

Název v anglickém jazyce

Synthesis of Si-NWs by PECVD using Sn as catalyst on TCO thin film for optoelectronic devicies

Popis výsledku anglicky

In this paper we focus on silicon nanowires (Si-NWs) which were fabricated on transparent conductive substrates (TCO) by plasma-enhanced chemical vapor deposition (PECVD) method using Sn as stimulated catalyst metal. TCO which we used are ZnO fabricated by direct current (dc) sputtering. Property of ZnO thin film was investigated by x-ray diffraction (XRD), volt-ohm-miliampere (VOM) meter, and Stylus method. In order to grow Si-NWs using PECVD we need to use Sn as catalyst to synthesize Si-NWs. Sn nanoparticles were fabricated by high vacuum evaporation system with SenVac thin film controller. Size and density of nanoparticles (NPs) were investigated by scanning electron microscope (SEM). The influence of the thickness and forming Sn NPs was studied. In particular, the factors affecting the formation of Si-NWs such as temperature and rate of gas were examined. Si-NWs' properties were investigated by SEM, Raman spectroscopy and energy dispersive x-ray (EDX) spectrocopyn

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advances in Natural Sciences-Nanoscience and Nanotechnology

ISSN

2043-6254

e-ISSN

—

Svazek periodika

5

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

1-8

Kód UT WoS článku

000365744600013

EID výsledku v databázi Scopus

2-s2.0-84916919386