Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00540849" target="_blank" >RIV/68378271:_____/18:00540849 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic applications

Popis výsledku v původním jazyce

The plasma enhanced chemical vapour deposition (PECVD) was combined with in situ deposition of Ge and Sn thin film by evaporation technique at surface temperature about 220°C to form tin nanoparticles (Ge or Sn NPs) on the surface of hydrogenated silicon thin films. Formation of NPs was additionally stimulated by hydrogen plasma treatment through a low pressure hydrogen glow discharge. Characterization of the prepared structures was performed by scanning electron microscopy (SEM), PIN diode structures with and without the embedded Ge or Sn NPs were characterized of I-V characteristics.

Název v anglickém jazyce

Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic applications

Popis výsledku anglicky

The plasma enhanced chemical vapour deposition (PECVD) was combined with in situ deposition of Ge and Sn thin film by evaporation technique at surface temperature about 220°C to form tin nanoparticles (Ge or Sn NPs) on the surface of hydrogenated silicon thin films. Formation of NPs was additionally stimulated by hydrogen plasma treatment through a low pressure hydrogen glow discharge. Characterization of the prepared structures was performed by scanning electron microscopy (SEM), PIN diode structures with and without the embedded Ge or Sn NPs were characterized of I-V characteristics.

Druh

O - Ostatní výsledky

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GC16-10429J" target="_blank" >GC16-10429J: Optické, elektrické a magnetické vlastnosti ZnO nanostruktur</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů