Time-resolved in situ spectroscopy during formation of the GaP/Si(100) heterointerface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00448022" target="_blank" >RIV/68378271:_____/15:00448022 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1021/jz502526e" target="_blank" >http://dx.doi.org/10.1021/jz502526e</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/jz502526e" target="_blank" >10.1021/jz502526e</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Time-resolved in situ spectroscopy during formation of the GaP/Si(100) heterointerface

Popis výsledku v původním jazyce

Though III?V/Si(100) heterointerfaces are essential for future epitaxial high-performance devices, their atomic structure is an open historical question. Benchmarking of transient optical in situ spectroscopy during chemical vapor deposition to chemicalanalysis by X-ray photoelectron spectroscopy enables us to distinguish between formation of surfaces and of the heterointerface. A terrace-related optical anisotropy signal evolves during pulsed GaP nucleation on single-domain Si(100) surfaces. This dielectric anisotropy agrees well with the one calculated for buried GaP/Si(100) interfaces from differently thick GaP epilayers. X-ray photoelectron spectroscopy reveals a chemically shifted contribution of the P and Si emission lines, which quantitativelycorresponds to the existence of Si?P bonds at the buried heterointerface.

Název v anglickém jazyce

Time-resolved in situ spectroscopy during formation of the GaP/Si(100) heterointerface

Popis výsledku anglicky

Though III?V/Si(100) heterointerfaces are essential for future epitaxial high-performance devices, their atomic structure is an open historical question. Benchmarking of transient optical in situ spectroscopy during chemical vapor deposition to chemicalanalysis by X-ray photoelectron spectroscopy enables us to distinguish between formation of surfaces and of the heterointerface. A terrace-related optical anisotropy signal evolves during pulsed GaP nucleation on single-domain Si(100) surfaces. This dielectric anisotropy agrees well with the one calculated for buried GaP/Si(100) interfaces from differently thick GaP epilayers. X-ray photoelectron spectroscopy reveals a chemically shifted contribution of the P and Si emission lines, which quantitativelycorresponds to the existence of Si?P bonds at the buried heterointerface.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry Letters

ISSN

1948-7185

e-ISSN

—

Svazek periodika

6

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

464-469

Kód UT WoS článku

000349137400027

EID výsledku v databázi Scopus

2-s2.0-84922567049