Band bending at heterovalent interfaces: hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00547617" target="_blank" >RIV/68378271:_____/21:00547617 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.apsusc.2021.150514" target="_blank" >https://doi.org/10.1016/j.apsusc.2021.150514</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2021.150514" target="_blank" >10.1016/j.apsusc.2021.150514</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Band bending at heterovalent interfaces: hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures

Popis výsledku v původním jazyce

GaP is a preferred candidate for the transition between Si and heterogeneous III-V epilayers as it is nearly lattice-matched to Si. Here, we scrutinize the atomic structure and electronic properties of GaP/Si(001) heterointerfaces utilizing hard X-ray photoelectron spectroscopy (HAXPES). GaP(001) epitaxial films with thicknesses between 4 - 50 nm are prepared by metalorganic vapor phase epitaxy on either predominantly single-domain (SD) or two-domain (TD) Si(001) surfaces. We reveal core level shifts of the P 2p and Si 2p peaks near the interface as well as core level shifts in the Ga 3d peaks near the surface. We suggest an Inter-Diffused Layer (IDL) model of the GaP/Si(001) interfacial structure with Si-P bonds at the heterointerface and residual P atoms in the Si substrate. Using a newly developed Parametrized Polynomial Function (PPF) approach, we derive a non-monotonic band bending profile in the heterostructures, correct experimental valence band offsets implying interfacial electronic barriers, and determine valence band discontinuities at GaP/Si(001) interfaces.

Název v anglickém jazyce

Band bending at heterovalent interfaces: hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures

Popis výsledku anglicky

GaP is a preferred candidate for the transition between Si and heterogeneous III-V epilayers as it is nearly lattice-matched to Si. Here, we scrutinize the atomic structure and electronic properties of GaP/Si(001) heterointerfaces utilizing hard X-ray photoelectron spectroscopy (HAXPES). GaP(001) epitaxial films with thicknesses between 4 - 50 nm are prepared by metalorganic vapor phase epitaxy on either predominantly single-domain (SD) or two-domain (TD) Si(001) surfaces. We reveal core level shifts of the P 2p and Si 2p peaks near the interface as well as core level shifts in the Ga 3d peaks near the surface. We suggest an Inter-Diffused Layer (IDL) model of the GaP/Si(001) interfacial structure with Si-P bonds at the heterointerface and residual P atoms in the Si substrate. Using a newly developed Parametrized Polynomial Function (PPF) approach, we derive a non-monotonic band bending profile in the heterostructures, correct experimental valence band offsets implying interfacial electronic barriers, and determine valence band discontinuities at GaP/Si(001) interfaces.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

565

Číslo periodika v rámci svazku

Nov.

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

13

Strana od-do

150514

Kód UT WoS článku

000681219900001

EID výsledku v databázi Scopus

2-s2.0-85109444736