Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00562785" target="_blank" >RIV/68378271:_____/22:00562785 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.apsusc.2022.154630" target="_blank" >https://doi.org/10.1016/j.apsusc.2022.154630</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2022.154630" target="_blank" >10.1016/j.apsusc.2022.154630</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams

Popis výsledku v původním jazyce

The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on the Si(100) surface. Stabilization of Si(100) substrate surfaces with As is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this paper, GaP epitaxial films were grown on As-terminated Si(100) substrates by MOVPE. The GaP(As)/Si(100) heterostructures were investigated by XPS, GCIB, HAXPES. We found residuals of As atoms in the GaP lattice and a localization of As atoms at the GaP(As)/Si(100) interface. Deconvolution of core level peaks revealed interface core level shifts. Similar valence band offset (VBO) values of 0.6 eV were obtained, regardless of the doping type of Si substrate, Si substrate miscut or type of As-terminated Si substrate surface. The band alignment diagram of the heterostructure was deduced.

Název v anglickém jazyce

Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams

Popis výsledku anglicky

The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on the Si(100) surface. Stabilization of Si(100) substrate surfaces with As is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this paper, GaP epitaxial films were grown on As-terminated Si(100) substrates by MOVPE. The GaP(As)/Si(100) heterostructures were investigated by XPS, GCIB, HAXPES. We found residuals of As atoms in the GaP lattice and a localization of As atoms at the GaP(As)/Si(100) interface. Deconvolution of core level peaks revealed interface core level shifts. Similar valence band offset (VBO) values of 0.6 eV were obtained, regardless of the doping type of Si substrate, Si substrate miscut or type of As-terminated Si substrate surface. The band alignment diagram of the heterostructure was deduced.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

605

Číslo periodika v rámci svazku

Dec.

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

11

Strana od-do

154630

Kód UT WoS článku

000933898600001

EID výsledku v databázi Scopus

2-s2.0-85137642945