Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00562792" target="_blank" >RIV/68378271:_____/22:00562792 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.surfin.2022.102384" target="_blank" >https://doi.org/10.1016/j.surfin.2022.102384</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.surfin.2022.102384" target="_blank" >10.1016/j.surfin.2022.102384</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

Popis výsledku v původním jazyce

Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical cells. In our paper, we investigated chemical composition and electronic properties of n-GaInP/n-AlInP heterostructures by X-ray photoelectron spectroscopy (XPS). 1 nm – 50 nm thick n-AlInP(100) epitaxial layers were grown on n-GaInP(100) buffer layer on n-GaAs(100) substrates by metal organic vapor phase epitaxy. Atomic composition analysis confirmed P-rich termination on surface. Angle-resolved XPS measurements revealed a surface core level shift and the absence of interface core level shifts. We found an upward surface band bending on the (2×2)/c(4×2) surfaces most probably caused by localized mid-gap electronic states. Pinning of the Fermi level by localized electronic states remained in n-GaInP/n-AlInP heterostructures. A valence band offset was derived by XPS.

Název v anglickém jazyce

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

Popis výsledku anglicky

Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical cells. In our paper, we investigated chemical composition and electronic properties of n-GaInP/n-AlInP heterostructures by X-ray photoelectron spectroscopy (XPS). 1 nm – 50 nm thick n-AlInP(100) epitaxial layers were grown on n-GaInP(100) buffer layer on n-GaAs(100) substrates by metal organic vapor phase epitaxy. Atomic composition analysis confirmed P-rich termination on surface. Angle-resolved XPS measurements revealed a surface core level shift and the absence of interface core level shifts. We found an upward surface band bending on the (2×2)/c(4×2) surfaces most probably caused by localized mid-gap electronic states. Pinning of the Fermi level by localized electronic states remained in n-GaInP/n-AlInP heterostructures. A valence band offset was derived by XPS.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EF16_019%2F0000760" target="_blank" >EF16_019/0000760: Fyzika pevných látek pro 21. století</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surfaces and Interfaces

ISSN

2468-0230

e-ISSN

2468-0230

Svazek periodika

34

Číslo periodika v rámci svazku

Nov.

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

102384

Kód UT WoS článku

000888526300002

EID výsledku v databázi Scopus

2-s2.0-85140024966