MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 ?m

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00448593" target="_blank" >RIV/68378271:_____/15:00448593 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.09.053" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2014.09.053</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.09.053" target="_blank" >10.1016/j.jcrysgro.2014.09.053</a>

Jazyk výsledku

angličtina

Název v původním jazyce

MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 ?m

Popis výsledku v původním jazyce

Preparation and properties of InAs/GaAs quantum dots prepared by the MOVPE covered by GaAsSb SRL with extremely long emission wavelength at 1.8 ?m is presented. The prolongation of the emission wavelength was achieved by the introduction of GaAsSb SRL with Sb content of about 30% in the solid phase. The high Sb concentration in the SRL causes the preservation of QD size, it prolongs the PL wavelength. Furthermore, high content of antimony leads to a creation of type II heterostructure for which a red shift of the PL wavelength and decrease of the PL intensity is typical. Low PL intensity may complicate light emitting applications; however, fast separation of carriers in the type II structure is an advantage for detector or solar cell application, especially with the long working wavelength. With respect to the perspective application of this structure, the photocurrent measurement was chosen as the complementary characterization method.

Název v anglickém jazyce

MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 ?m

Popis výsledku anglicky

Preparation and properties of InAs/GaAs quantum dots prepared by the MOVPE covered by GaAsSb SRL with extremely long emission wavelength at 1.8 ?m is presented. The prolongation of the emission wavelength was achieved by the introduction of GaAsSb SRL with Sb content of about 30% in the solid phase. The high Sb concentration in the SRL causes the preservation of QD size, it prolongs the PL wavelength. Furthermore, high content of antimony leads to a creation of type II heterostructure for which a red shift of the PL wavelength and decrease of the PL intensity is typical. Low PL intensity may complicate light emitting applications; however, fast separation of carriers in the type II structure is an advantage for detector or solar cell application, especially with the long working wavelength. With respect to the perspective application of this structure, the photocurrent measurement was chosen as the complementary characterization method.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Svazek periodika

414

Číslo periodika v rámci svazku

Mar

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

167-171

Kód UT WoS článku

000349602900030

EID výsledku v databázi Scopus

2-s2.0-84922565864