Interplay of electron correlations and localization in disordered ?-tantalum films: evidence from dc transport and spectroscopic ellipsometry study

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00449091" target="_blank" >RIV/68378271:_____/15:00449091 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.4907862" target="_blank" >http://dx.doi.org/10.1063/1.4907862</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4907862" target="_blank" >10.1063/1.4907862</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Interplay of electron correlations and localization in disordered ?-tantalum films: evidence from dc transport and spectroscopic ellipsometry study

Popis výsledku v původním jazyce

We report the dc transport (5K less than or similar to T less than or similar to 380 K) and spectroscopic ellipsometry (0.8 eV <= h nu <= 8.5 eV, T similar or equal to 300 K) study of beta-Ta films prepared by rf sputtering deposition as a function of their thickness in the range 2.5 nm less than or similar to d less than or similar to 200 nm. The dc transport of the beta-Ta films with a thickness d greater than or similar to 25 nm is characterized by negative temperature coefficient of resistivity (TCR) caused by localization effects peculiar of highly disordered metals. Their dielectric function spectra display non-metallic-like behavior due to the presence of the pronounced band at 2 eV. We found that with increasing TCR absolute value, specifying elevated degree disorder, the optical spectral weight (SW) of free charge carriers decreases.

Název v anglickém jazyce

Interplay of electron correlations and localization in disordered ?-tantalum films: evidence from dc transport and spectroscopic ellipsometry study

Popis výsledku anglicky

We report the dc transport (5K less than or similar to T less than or similar to 380 K) and spectroscopic ellipsometry (0.8 eV <= h nu <= 8.5 eV, T similar or equal to 300 K) study of beta-Ta films prepared by rf sputtering deposition as a function of their thickness in the range 2.5 nm less than or similar to d less than or similar to 200 nm. The dc transport of the beta-Ta films with a thickness d greater than or similar to 25 nm is characterized by negative temperature coefficient of resistivity (TCR) caused by localization effects peculiar of highly disordered metals. Their dielectric function spectra display non-metallic-like behavior due to the presence of the pronounced band at 2 eV. We found that with increasing TCR absolute value, specifying elevated degree disorder, the optical spectral weight (SW) of free charge carriers decreases.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA15-13778S" target="_blank" >GA15-13778S: Studium epitaxních jevů ve feroelektrických nanovrstvách pomocí spektrální elipsometrie</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

—

Svazek periodika

106

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

—

Kód UT WoS článku

000349611800027

EID výsledku v databázi Scopus

2-s2.0-84923902103