Semiconducting WO3 thin films prepared by pulsed reactive magnetron sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00454787" target="_blank" >RIV/68378271:_____/15:00454787 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60461373:22310/15:43900479

Výsledek na webu

<a href="http://dx.doi.org/10.1007/s11164-015-1991-8" target="_blank" >http://dx.doi.org/10.1007/s11164-015-1991-8</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s11164-015-1991-8" target="_blank" >10.1007/s11164-015-1991-8</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Semiconducting WO3 thin films prepared by pulsed reactive magnetron sputtering

Popis výsledku v původním jazyce

WO3 crystalline semiconductor thin films for water-splitting applications were prepared by pulsed unbalanced reactive magnetron sputtering with W target and Ar+O2 gas mixture. Postdeposition annealing at temperature of 450°C was applied to the WO3 samples to improve their crystallinity and semiconductor properties. Various pulsing modes were tested in deposition experiments with different pulsing frequencies, discharge power applied in pulse, and average applied power. To determine the influence of theplasma parameters on the deposition process, the pulsed and average ion flux density on the substrate were measured using an ion probe. Different crystallite orientations were found for different modes of discharge pulsing. Preferential orientation of the (200) plane parallel to the substrate surface was identified for higher frequency of discharge pulsing with lower substrate pulsed ion flux but higher average substrate ion flux.

Název v anglickém jazyce

Semiconducting WO3 thin films prepared by pulsed reactive magnetron sputtering

Popis výsledku anglicky

WO3 crystalline semiconductor thin films for water-splitting applications were prepared by pulsed unbalanced reactive magnetron sputtering with W target and Ar+O2 gas mixture. Postdeposition annealing at temperature of 450°C was applied to the WO3 samples to improve their crystallinity and semiconductor properties. Various pulsing modes were tested in deposition experiments with different pulsing frequencies, discharge power applied in pulse, and average applied power. To determine the influence of theplasma parameters on the deposition process, the pulsed and average ion flux density on the substrate were measured using an ion probe. Different crystallite orientations were found for different modes of discharge pulsing. Preferential orientation of the (200) plane parallel to the substrate surface was identified for higher frequency of discharge pulsing with lower substrate pulsed ion flux but higher average substrate ion flux.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Research on Chemical Intermediates

ISSN

0922-6168

e-ISSN

—

Svazek periodika

41

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

9259-9266

Kód UT WoS článku

000365743300009

EID výsledku v databázi Scopus

2-s2.0-84924692431