WO3 thin films prepared by sedimentation and plasma sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00474060" target="_blank" >RIV/68378271:_____/17:00474060 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60461373:22310/17:43914890 RIV/61989592:15310/17:73581891

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.cej.2016.09.083" target="_blank" >http://dx.doi.org/10.1016/j.cej.2016.09.083</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.cej.2016.09.083" target="_blank" >10.1016/j.cej.2016.09.083</a>

Jazyk výsledku

angličtina

Název v původním jazyce

WO3 thin films prepared by sedimentation and plasma sputtering

Popis výsledku v původním jazyce

Tungsten trioxide (WO3) semiconducting thin films were prepared by (i) sedimentation process, (ii) reactive magnetron sputtering from tungsten target under various modes of plasma excitation and (iii) combination of both methods. All samples were deposited on FTO (fluorine-doped tin oxide) coated glass substrate and were annealed after deposition under open air conditions in 450 C in order to improve their crystallinity and semiconductor properties. This study deals with a comparison of photo-electrochemical properties of the layers prepared by the methods mentioned above. After annealing, all the prepared WO3 films revealed monoclinic crystalline structure while the as-deposited samples were amorphous. Different orientation of crystallites was found for different mode of discharge pulsing in plasma prepared samples. The presence of crystalline WO3 is essential for significant photocurrent response.

Název v anglickém jazyce

WO3 thin films prepared by sedimentation and plasma sputtering

Popis výsledku anglicky

Tungsten trioxide (WO3) semiconducting thin films were prepared by (i) sedimentation process, (ii) reactive magnetron sputtering from tungsten target under various modes of plasma excitation and (iii) combination of both methods. All samples were deposited on FTO (fluorine-doped tin oxide) coated glass substrate and were annealed after deposition under open air conditions in 450 C in order to improve their crystallinity and semiconductor properties. This study deals with a comparison of photo-electrochemical properties of the layers prepared by the methods mentioned above. After annealing, all the prepared WO3 films revealed monoclinic crystalline structure while the as-deposited samples were amorphous. Different orientation of crystallites was found for different mode of discharge pulsing in plasma prepared samples. The presence of crystalline WO3 is essential for significant photocurrent response.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Chemical Engineering Journal

ISSN

1385-8947

e-ISSN

—

Svazek periodika

318

Číslo periodika v rámci svazku

Jun

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

281-288

Kód UT WoS článku

000399851600033

EID výsledku v databázi Scopus

2-s2.0-85016318309