Intermediate band solar cell structures grown by MOVPE

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00455033" target="_blank" >RIV/68378271:_____/15:00455033 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Intermediate band solar cell structures grown by MOVPE

Popis výsledku v původním jazyce

Intermediate band solar cell structures were prepared by MOVPE. This type of structure offer a promising way to significantly increase cell efficiency compared to a single-junction solar cells. Efficient photocurrent generation above 1200 nm (below Si band gap) was demonstrated. The promising spectral dependence at this region may be explained by the better carrier separation by a triangular barrier in the valence band suppressing the radiative recombination rate in QDs in this type of structure. In thecase of InAs + Ga(As)Sb combined QD samples, a strong decrease of the photocurrent was observed when the number of QD layers in the structure was changed from 1 to 5. This can probably be caused by too complicated structure with multiple combined QD layers, where accumulation of strain and structural defects very probably take place and suppress photocurrent.

Název v anglickém jazyce

Intermediate band solar cell structures grown by MOVPE

Popis výsledku anglicky

Intermediate band solar cell structures were prepared by MOVPE. This type of structure offer a promising way to significantly increase cell efficiency compared to a single-junction solar cells. Efficient photocurrent generation above 1200 nm (below Si band gap) was demonstrated. The promising spectral dependence at this region may be explained by the better carrier separation by a triangular barrier in the valence band suppressing the radiative recombination rate in QDs in this type of structure. In thecase of InAs + Ga(As)Sb combined QD samples, a strong decrease of the photocurrent was observed when the number of QD layers in the structure was changed from 1 to 5. This can probably be caused by too complicated structure with multiple combined QD layers, where accumulation of strain and structural defects very probably take place and suppress photocurrent.

Druh

O - Ostatní výsledky

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GP14-21285P" target="_blank" >GP14-21285P: Solární články s vloženým pásem</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů