Microwave radiation absorption and Shubnikov de Haas oscillations in semi-metal InAs/GaSb/AlSb composite quantum wells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00463596" target="_blank" >RIV/68378271:_____/16:00463596 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2208588" target="_blank" >http://dx.doi.org/10.1117/12.2208588</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2208588" target="_blank" >10.1117/12.2208588</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Microwave radiation absorption and Shubnikov de Haas oscillations in semi-metal InAs/GaSb/AlSb composite quantum wells

Popis výsledku v původním jazyce

Strong Shubnikov – de Haas (SdH) oscillations were observed in the derivative of microwave absorption (f=10 GHz) in the InAs/GaSb/AlSb composite quantum wells (CQWs) using electron-paramagnetic-resonance spectroscopy at low temperatures (2.7–20 K) and in the magnetic field up to 14 kOe. CQWs were grown on the n-GaSb:Te(100) and n- InAs:Mn(100) substrates with various width of QWs by MOVPE. Predominance contribution of the bulk n-GaSb substrate in SdH oscillations was manifested.Two frequencies of the SdH oscillations were found from Fourier analysis, which is connected to warping of the Fermi surface of GaSb. Unusual angular indicatrix was observed in dependence on orientation of the samples in the magnetic field. Obtained results can be explained by inversion asymmetry, which is a feature of the substances with lack of inversion centres.n

Název v anglickém jazyce

Microwave radiation absorption and Shubnikov de Haas oscillations in semi-metal InAs/GaSb/AlSb composite quantum wells

Popis výsledku anglicky

Strong Shubnikov – de Haas (SdH) oscillations were observed in the derivative of microwave absorption (f=10 GHz) in the InAs/GaSb/AlSb composite quantum wells (CQWs) using electron-paramagnetic-resonance spectroscopy at low temperatures (2.7–20 K) and in the magnetic field up to 14 kOe. CQWs were grown on the n-GaSb:Te(100) and n- InAs:Mn(100) substrates with various width of QWs by MOVPE. Predominance contribution of the bulk n-GaSb substrate in SdH oscillations was manifested.Two frequencies of the SdH oscillations were found from Fourier analysis, which is connected to warping of the Fermi surface of GaSb. Unusual angular indicatrix was observed in dependence on orientation of the samples in the magnetic field. Obtained results can be explained by inversion asymmetry, which is a feature of the substances with lack of inversion centres.n

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA13-15286S" target="_blank" >GA13-15286S: Nano-heterostruktury s hlubokou kvantovou jámou na bázi GaSb</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Quantum Sensing and Nano Electronics and Photonics XIII

ISBN

978-162841990-0

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

7

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

San Francisco

Datum konání akce

14. 2. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000388442500036