Microwave radiation absorption and Shubnikov-de Haas oscillations of InAs/GaSb/AlSb quantum wells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00463622" target="_blank" >RIV/68378271:_____/16:00463622 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/16:00464448

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Microwave radiation absorption and Shubnikov-de Haas oscillations of InAs/GaSb/AlSb quantum wells

Popis výsledku v původním jazyce

Magnetotransport, optical, spin-dependent and topological properties of the composite InAs/GaSb/AlSb quantum wells (CQWs) based on the broken-gap heterojunctions are actively studied during two last decades as promising materials for spintronic and nanoelectronic applications.nAbsorption of microwave radiation and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlAs CQWs were measured by EPR at 10 GHz on the semimetal InAs/GaSb/AlSb QWs prepared by MOVPE at magnetic fields up to 14 kOe and at low temperatures (T = 2.7–20 K). Unusual angular dependence of Shubnikov-de Haas oscillations can be explained by inversion asymmetry which is characteristic for A3B5 semiconductors with sphalerite structures without center of symmetry. Low period Shubnikov-de Haas oscillations indicate the role of high concentration of 2D electrons, which is stable for different magnetic fields due to overflow of electrons from GaSb QW valent zone.

Název v anglickém jazyce

Microwave radiation absorption and Shubnikov-de Haas oscillations of InAs/GaSb/AlSb quantum wells

Popis výsledku anglicky

Magnetotransport, optical, spin-dependent and topological properties of the composite InAs/GaSb/AlSb quantum wells (CQWs) based on the broken-gap heterojunctions are actively studied during two last decades as promising materials for spintronic and nanoelectronic applications.nAbsorption of microwave radiation and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlAs CQWs were measured by EPR at 10 GHz on the semimetal InAs/GaSb/AlSb QWs prepared by MOVPE at magnetic fields up to 14 kOe and at low temperatures (T = 2.7–20 K). Unusual angular dependence of Shubnikov-de Haas oscillations can be explained by inversion asymmetry which is characteristic for A3B5 semiconductors with sphalerite structures without center of symmetry. Low period Shubnikov-de Haas oscillations indicate the role of high concentration of 2D electrons, which is stable for different magnetic fields due to overflow of electrons from GaSb QW valent zone.

Druh

O - Ostatní výsledky

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů