InGaN/GaN MQWs for scintillators perspectives and problems

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00463677" target="_blank" >RIV/68378271:_____/16:00463677 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

InGaN/GaN MQWs for scintillators perspectives and problems

Popis výsledku v původním jazyce

The III-nitrides became very important compound semiconductors in last twenty years and are used in many applications indispensable in nowadays life such as effective white diodes, blue lasers or high electron mobility transistors (HEMTs).nLarge band gap semiconductors such as GaN or ZnO are suitable for scintillator and detector structures for ionizing radiation detection. While ZnO is used in scintillators for several decades, the promising application of GaN epitaxial layers in scintillator structures has attracted scientific attention in last few years. Besides the strong exciton binding energy GaN has also an advantage of high radiation resistance. So the detectors of ionizing radiation and scintillators seem to be a new and perspective application of nitride semiconductors.nIn principle the scintillating nitride heterostructure could be based on InGaN/GaN multiple quantum well (QW) structure similarly to LED but with some differences in structure design. The structure should contain higher number of QD layers compared to LEDs, In content in QW should be higher to obtain sufficient carrier confinement for thin thickness of QWs. The p-n junction is not required; however, some n-type doping is necessary in case of detection of charged particle radiation like electrons or protons. Active part of the structure for scintillators has to be much thicker than in LEDs. Another problem for fast scintillators is the slow defect green-yellow photoluminescence band, which become dominant when the luminescence is excited by ionizing radiation, see Fig. 1. Results obtained on several type of structures designed for scintillators will be discussed.n

Název v anglickém jazyce

InGaN/GaN MQWs for scintillators perspectives and problems

Popis výsledku anglicky

The III-nitrides became very important compound semiconductors in last twenty years and are used in many applications indispensable in nowadays life such as effective white diodes, blue lasers or high electron mobility transistors (HEMTs).nLarge band gap semiconductors such as GaN or ZnO are suitable for scintillator and detector structures for ionizing radiation detection. While ZnO is used in scintillators for several decades, the promising application of GaN epitaxial layers in scintillator structures has attracted scientific attention in last few years. Besides the strong exciton binding energy GaN has also an advantage of high radiation resistance. So the detectors of ionizing radiation and scintillators seem to be a new and perspective application of nitride semiconductors.nIn principle the scintillating nitride heterostructure could be based on InGaN/GaN multiple quantum well (QW) structure similarly to LED but with some differences in structure design. The structure should contain higher number of QD layers compared to LEDs, In content in QW should be higher to obtain sufficient carrier confinement for thin thickness of QWs. The p-n junction is not required; however, some n-type doping is necessary in case of detection of charged particle radiation like electrons or protons. Active part of the structure for scintillators has to be much thicker than in LEDs. Another problem for fast scintillators is the slow defect green-yellow photoluminescence band, which become dominant when the luminescence is excited by ionizing radiation, see Fig. 1. Results obtained on several type of structures designed for scintillators will be discussed.n

Druh

O - Ostatní výsledky

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA16-11769S" target="_blank" >GA16-11769S: Nitridové heterostruktury pro rychlou detekci ionizujícího záření</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů