Design of InGaN/GaN MQW structure for scintillator applications
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00496205" target="_blank" >RIV/68378271:_____/18:00496205 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Design of InGaN/GaN MQW structure for scintillator applications
Popis výsledku v původním jazyce
Nitride semiconductor heterostructures are widely used for light emitting and laser diodes as well as for high power and high frequency applications. Recently, new application for InGaN/GaN multiple quantum well (MQW) heterostructures has emerged. It was shown that these heterostructures, if properly designed, can work as very efficient fast scintillators with long lifetime due to their radiation resistance. Although this application does not have such a massive market as LEDs, LDs or HEMTs, there is still very strong demand for fast scintillators and detectors of ionizing radiation due to the expansion of new diagnostic methods in medicine, electron microscopy and nuclear physics.
Název v anglickém jazyce
Design of InGaN/GaN MQW structure for scintillator applications
Popis výsledku anglicky
Nitride semiconductor heterostructures are widely used for light emitting and laser diodes as well as for high power and high frequency applications. Recently, new application for InGaN/GaN multiple quantum well (MQW) heterostructures has emerged. It was shown that these heterostructures, if properly designed, can work as very efficient fast scintillators with long lifetime due to their radiation resistance. Although this application does not have such a massive market as LEDs, LDs or HEMTs, there is still very strong demand for fast scintillators and detectors of ionizing radiation due to the expansion of new diagnostic methods in medicine, electron microscopy and nuclear physics.
Klasifikace
Druh
O - Ostatní výsledky
CEP obor
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OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
<a href="/cs/project/GA16-11769S" target="_blank" >GA16-11769S: Nitridové heterostruktury pro rychlou detekci ionizujícího záření</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2018
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů