Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00467514" target="_blank" >RIV/68378271:_____/16:00467514 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985858:_____/16:00467514

Výsledek na webu

<a href="http://dx.doi.org/10.1134/S1063782616070101" target="_blank" >http://dx.doi.org/10.1134/S1063782616070101</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1134/S1063782616070101" target="_blank" >10.1134/S1063782616070101</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

Popis výsledku v původním jazyce

Si nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 to 250 mJ/cm2 (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.

Název v anglickém jazyce

Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

Popis výsledku anglicky

Si nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 to 250 mJ/cm2 (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/LH12236" target="_blank" >LH12236: Kvantový rozměrový efekt v polovodičových nanostrukturách pro optoelektroniku.</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Semiconductors

ISSN

1063-7826

e-ISSN

—

Svazek periodika

50

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

RU - Ruská federace

Počet stran výsledku

6

Strana od-do

935-940

Kód UT WoS článku

000379173600016

EID výsledku v databázi Scopus

2-s2.0-84978166207