Hydrogenated amorphous silicon based p-i-n structures with Si and Ge nanocrystals in i-layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471134" target="_blank" >RIV/68378271:_____/16:00471134 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985858:_____/16:00471134

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2266436" target="_blank" >http://dx.doi.org/10.1117/12.2266436</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2266436" target="_blank" >10.1117/12.2266436</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Hydrogenated amorphous silicon based p-i-n structures with Si and Ge nanocrystals in i-layers

Popis výsledku v původním jazyce

Si and Ge nanocrystals were created into i-layers of p–i–n structures based on thin a-Si:H films. The nanocrystals were formed using pulsed laser annealing with an excimer XeCl laser generating pulses with the wavelength of 308 nm and the duration of 15 ns. The laser treatment allowed the formation of the nanoscrystals with the average size from 2 to 5 nm, depending on the laser-annealing parameters. The size of nanocrystals (in Si and Ge layers) and their Si-Ge composition (in GeSi alloy structures) was estimated through Raman spectra analysis. The structural parameters of Si, Ge and GeSi nanocrystals were also studied using electron microscopy and atomic force microscopy. Current–voltage measurements showed that the p–i–n structures exhibit diode characteristics. The diodes with Si nanocrystals produced the electroluminescence peak in the infrared range (0.9–1.0 eV), which spectral position was dependent on the laser annealing conditions.

Název v anglickém jazyce

Hydrogenated amorphous silicon based p-i-n structures with Si and Ge nanocrystals in i-layers

Popis výsledku anglicky

Si and Ge nanocrystals were created into i-layers of p–i–n structures based on thin a-Si:H films. The nanocrystals were formed using pulsed laser annealing with an excimer XeCl laser generating pulses with the wavelength of 308 nm and the duration of 15 ns. The laser treatment allowed the formation of the nanoscrystals with the average size from 2 to 5 nm, depending on the laser-annealing parameters. The size of nanocrystals (in Si and Ge layers) and their Si-Ge composition (in GeSi alloy structures) was estimated through Raman spectra analysis. The structural parameters of Si, Ge and GeSi nanocrystals were also studied using electron microscopy and atomic force microscopy. Current–voltage measurements showed that the p–i–n structures exhibit diode characteristics. The diodes with Si nanocrystals produced the electroluminescence peak in the infrared range (0.9–1.0 eV), which spectral position was dependent on the laser annealing conditions.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10303 - Particles and field physics

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

International Conference on Micro- and Nanoelectronics - 2016. ICMNE 2016

ISBN

978-151060949-5

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

12

Strana od-do

1-12

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

Zvenigorod

Datum konání akce

3. 10. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000393152900013