Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00556457" target="_blank" >RIV/68378271:_____/22:00556457 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12157/2622731/Picosecond-infrared-laser-crystallization-of-Ge-layers-in-Ge-Si/10.1117/12.2622731.short" target="_blank" >https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12157/2622731/Picosecond-infrared-laser-crystallization-of-Ge-layers-in-Ge-Si/10.1117/12.2622731.short</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2622731" target="_blank" >10.1117/12.2622731</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications

Popis výsledku v původním jazyce

The processes involved in picosecond infrared pulsed laser annealing of multylayer structures consisting of alternating thin films of amorphous silicon and germanium were investigated. The films were fabricated by plasma-chemical deposition on Si(001) and glass substrates. An analysis of structural transformation of Ge/Si multi-nanolayers was performed using Raman spectroscopy. Regimes of annealing were found when the Ge layers are partially crystallized while the Si layers remain amorphous without noticeable intermixing of Ge and Si. The developed approach can be used for creation of GeSi solid alloys (which can be used in memristors on not refractive substrates) and also for creation of Si based p-i-n structures on non-refractory substrates with Ge nanoclusters in i-layer, that can enhance the efficiency of thin film solar cells.

Název v anglickém jazyce

Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications

Popis výsledku anglicky

The processes involved in picosecond infrared pulsed laser annealing of multylayer structures consisting of alternating thin films of amorphous silicon and germanium were investigated. The films were fabricated by plasma-chemical deposition on Si(001) and glass substrates. An analysis of structural transformation of Ge/Si multi-nanolayers was performed using Raman spectroscopy. Regimes of annealing were found when the Ge layers are partially crystallized while the Si layers remain amorphous without noticeable intermixing of Ge and Si. The developed approach can be used for creation of GeSi solid alloys (which can be used in memristors on not refractive substrates) and also for creation of Si based p-i-n structures on non-refractory substrates with Ge nanoclusters in i-layer, that can enhance the efficiency of thin film solar cells.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of SPIE - The International Society for Optical Engineering

ISBN

—

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

10

Strana od-do

1215702

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

Zvenigorod

Datum konání akce

4. 10. 2021

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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