Ultrafast infrared laser crystallization of amorphous Si/Ge multilayer structures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00571963" target="_blank" >RIV/68378271:_____/23:00571963 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/23:00367038

Výsledek na webu

<a href="https://hdl.handle.net/11104/0342818" target="_blank" >https://hdl.handle.net/11104/0342818</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/ma16093572" target="_blank" >10.3390/ma16093572</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ultrafast infrared laser crystallization of amorphous Si/Ge multilayer structures

Popis výsledku v původním jazyce

Silicon–germanium multilayer structures consisting of alternating Si and Ge amorphous nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid-infrared (1500 nm) wavelengths. In this paper, we investigate the effects of the type of substrate (Si or glass), and the number of laser pulses (single-shot and multi-shot regimes) on the crystallization of the layers. Based on structural Raman spectroscopy analysis, several annealing regimes were revealed depending on laser fluence, including partial or complete crystallization of the components and formation of solid Si–Ge alloys. Conditions for selective crystallization of germanium when Si remains amorphous and there is no intermixing between the Si and Ge layers were found. Femtosecond mid-IR laser annealing appeared to be particularly favorable for such selective crystallization.

Název v anglickém jazyce

Ultrafast infrared laser crystallization of amorphous Si/Ge multilayer structures

Popis výsledku anglicky

Silicon–germanium multilayer structures consisting of alternating Si and Ge amorphous nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid-infrared (1500 nm) wavelengths. In this paper, we investigate the effects of the type of substrate (Si or glass), and the number of laser pulses (single-shot and multi-shot regimes) on the crystallization of the layers. Based on structural Raman spectroscopy analysis, several annealing regimes were revealed depending on laser fluence, including partial or complete crystallization of the components and formation of solid Si–Ge alloys. Conditions for selective crystallization of germanium when Si remains amorphous and there is no intermixing between the Si and Ge layers were found. Femtosecond mid-IR laser annealing appeared to be particularly favorable for such selective crystallization.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/EF15_003%2F0000445" target="_blank" >EF15_003/0000445: Pokročilá příprava funkčních materiálů: Od mono k bi- a tri-chromatické excitaci s použitím tvarovaných laserových pulsů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials

ISSN

1996-1944

e-ISSN

1996-1944

Svazek periodika

16

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

12

Strana od-do

3572

Kód UT WoS článku

000987318600001

EID výsledku v databázi Scopus

2-s2.0-85159364096