Very smooth FeSb2Te and Ce0.1Fe0.7Co3.3Sb12 layers prepared by modified PLD

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00469322" target="_blank" >RIV/68378271:_____/16:00469322 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389013:_____/16:00469322 RIV/68407700:21460/16:00237810

Výsledek na webu

<a href="http://dx.doi.org/10.1007/s11664-015-4295-2" target="_blank" >http://dx.doi.org/10.1007/s11664-015-4295-2</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s11664-015-4295-2" target="_blank" >10.1007/s11664-015-4295-2</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Very smooth FeSb2Te and Ce0.1Fe0.7Co3.3Sb12 layers prepared by modified PLD

Popis výsledku v původním jazyce

We report on the preparation of thermoelectric layers of FeSb2Te and Ce0.1Fe0.7Co3.3Sb12 on silicon (100) and fused silica substrates via a combination of pulsed laser deposition (PLD) and rapid thermal annealing methods. A wide range of deposition conditions were tested including on-and off-axis approaches and variation of the annealing temperature profile. Wavelength dispersive x-ray spectroscopy was used to determine stoichiometry. An optical microscope, mechanical profilometer, and atomic force microscopy served to map layer topology. For the FeSb2Te layers, Sa was between 1.4 nm and 6 nm, with Sq ranging from 2.1 nm to 7.8 nm. For Ce0.1Fe0.7Co3.3Sb12 layers, Sa was from 1.3 nm to 4.2 nm and Sq between 1.7 nm and 6.2 nm. Crystalline structure was determined by x-ray diffraction. The best layers (in terms of smooth surface and crystalline structure) prepared using a modified off-axis PLD arrangement were then characterized for thermoelectric properties.

Název v anglickém jazyce

Very smooth FeSb2Te and Ce0.1Fe0.7Co3.3Sb12 layers prepared by modified PLD

Popis výsledku anglicky

We report on the preparation of thermoelectric layers of FeSb2Te and Ce0.1Fe0.7Co3.3Sb12 on silicon (100) and fused silica substrates via a combination of pulsed laser deposition (PLD) and rapid thermal annealing methods. A wide range of deposition conditions were tested including on-and off-axis approaches and variation of the annealing temperature profile. Wavelength dispersive x-ray spectroscopy was used to determine stoichiometry. An optical microscope, mechanical profilometer, and atomic force microscopy served to map layer topology. For the FeSb2Te layers, Sa was between 1.4 nm and 6 nm, with Sq ranging from 2.1 nm to 7.8 nm. For Ce0.1Fe0.7Co3.3Sb12 layers, Sa was from 1.3 nm to 4.2 nm and Sq between 1.7 nm and 6.2 nm. Crystalline structure was determined by x-ray diffraction. The best layers (in terms of smooth surface and crystalline structure) prepared using a modified off-axis PLD arrangement were then characterized for thermoelectric properties.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

<a href="/cs/project/GA13-33056S" target="_blank" >GA13-33056S: Charakterizace tenkých termoelektrických vrstev a multi-vrstevnatých struktur pomocí rastrovacího termálního mikroskopu a Harmanovy metody.</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electronic Materials

ISSN

0361-5235

e-ISSN

—

Svazek periodika

45

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

1921-1926

Kód UT WoS článku

000371163400097

EID výsledku v databázi Scopus

2-s2.0-84959483340