Rapid Thermal Annealing of YAG based planar waveguides prepared by PLD

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F12%3A00193292" target="_blank" >RIV/68407700:21460/12:00193292 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Rapid Thermal Annealing of YAG based planar waveguides prepared by PLD

Popis výsledku v původním jazyce

Amorphous erbium doped yttrium aluminium oxide deposited by pulsed laser deposition (PLD) was annealed by the rapid thermal annealing technique. The influence of annealing parameters and starting layer properties on resulting crystalline structure, surface roughness, and waveguiding properties are studied. Atomic force microscopy and scanning electron microscopy (SEM) techniques were applied to study the surface morphology and growth structure inside the layer (SEM of cleaved layer). X-ray diffraction was implemented to study the changes of crystalline structure. The results are compared to the layers prepared by PLD technique with high substrate temperature.

Název v anglickém jazyce

Rapid Thermal Annealing of YAG based planar waveguides prepared by PLD

Popis výsledku anglicky

Amorphous erbium doped yttrium aluminium oxide deposited by pulsed laser deposition (PLD) was annealed by the rapid thermal annealing technique. The influence of annealing parameters and starting layer properties on resulting crystalline structure, surface roughness, and waveguiding properties are studied. Atomic force microscopy and scanning electron microscopy (SEM) techniques were applied to study the surface morphology and growth structure inside the layer (SEM of cleaved layer). X-ray diffraction was implemented to study the changes of crystalline structure. The results are compared to the layers prepared by PLD technique with high substrate temperature.

Druh

O - Ostatní výsledky

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů