Technology of AlSb/GaSb based LED nanostructures for high temperature superlinear luminescence

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00469570" target="_blank" >RIV/68378271:_____/16:00469570 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Technology of AlSb/GaSb based LED nanostructures for high temperature superlinear luminescence

Popis výsledku v původním jazyce

The superlinear (SL) electroluminescence (EL) of the MOVPE structures based on AlSb/InAs(1-x)Sbx/AlSb deep quantum wells (QWs) grown by MOVPE on n-GaSb:Te substrates was measured. Preparation technology of these structures is described in more detail. Dependencesof the EL spectra and optical power on driving current of nanoheterostructures with a deep AlSb/InAs(1-x)Sbx/AlSb QW for 77 – 300 K temperature range are presented. Intensive two-band SL EL in the 0.5 - 0.8 eV photon energy range and optical power enhancement with the drive current at room temperature caused by the contribution of the additional electron-hole pairs, generated at AlSb/InAs interface, due to the impact ionization were found. Study of the SL EL temperature dependence at 90 – 300 K range, based on our previous work, enabled us to define the role of the first and second heavy hole levels in the radiative recombination process.

Název v anglickém jazyce

Technology of AlSb/GaSb based LED nanostructures for high temperature superlinear luminescence

Popis výsledku anglicky

The superlinear (SL) electroluminescence (EL) of the MOVPE structures based on AlSb/InAs(1-x)Sbx/AlSb deep quantum wells (QWs) grown by MOVPE on n-GaSb:Te substrates was measured. Preparation technology of these structures is described in more detail. Dependencesof the EL spectra and optical power on driving current of nanoheterostructures with a deep AlSb/InAs(1-x)Sbx/AlSb QW for 77 – 300 K temperature range are presented. Intensive two-band SL EL in the 0.5 - 0.8 eV photon energy range and optical power enhancement with the drive current at room temperature caused by the contribution of the additional electron-hole pairs, generated at AlSb/InAs interface, due to the impact ionization were found. Study of the SL EL temperature dependence at 90 – 300 K range, based on our previous work, enabled us to define the role of the first and second heavy hole levels in the radiative recombination process.

Druh

O - Ostatní výsledky

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/LO1603" target="_blank" >LO1603: Centrum technologie a pokročilé strukturní analýzy aplikačně významných materiálů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů