Thermoelectric nanocrystalline YbCoSb laser prepared layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00470066" target="_blank" >RIV/68378271:_____/16:00470066 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389013:_____/16:00470066 RIV/68407700:21460/16:00303853

Výsledek na webu

<a href="http://dx.doi.org/10.1007/s00339-016-9685-7" target="_blank" >http://dx.doi.org/10.1007/s00339-016-9685-7</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s00339-016-9685-7" target="_blank" >10.1007/s00339-016-9685-7</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Thermoelectric nanocrystalline YbCoSb laser prepared layers

Popis výsledku v původním jazyce

Filled thermoelectric YbxCo4Sb12 layers were prepared by pulsed laser deposition method. The Yb0.19Co4Sb12 target was fabricated by hot pressing. Various deposition conditions were tested: target-substrate distance d(T-S) (4 or 6 cm), ambient argon pressure (from 0.5 to 13 Pa), laser repetition rate (from 3 to 10 Hz), substrate temperature (from 250 to 400 degrees C) and laser fluence (in region from 0.8 to 5 J cm(-2)). Film roughness was determined by mechanical profilometer and by AFM. For d(T-S) = 4 cm we observed a deficit of Yb and surplus of Co. Sb was transferred from target to film roughly stoichiometrically (as measured by EDX). Films created at 0.8 J cm(-2) exhibited generally poor stoichiometry and mechanical properties. Optimal conditions and stoichiometric transport were found for d(T-S) = 6 cm and 13 Pa of Ar. XRD shows that the films were nanocrystalline with CoSb3 structure. Grain size was in the range of similar to 50-80 nm.

Název v anglickém jazyce

Thermoelectric nanocrystalline YbCoSb laser prepared layers

Popis výsledku anglicky

Filled thermoelectric YbxCo4Sb12 layers were prepared by pulsed laser deposition method. The Yb0.19Co4Sb12 target was fabricated by hot pressing. Various deposition conditions were tested: target-substrate distance d(T-S) (4 or 6 cm), ambient argon pressure (from 0.5 to 13 Pa), laser repetition rate (from 3 to 10 Hz), substrate temperature (from 250 to 400 degrees C) and laser fluence (in region from 0.8 to 5 J cm(-2)). Film roughness was determined by mechanical profilometer and by AFM. For d(T-S) = 4 cm we observed a deficit of Yb and surplus of Co. Sb was transferred from target to film roughly stoichiometrically (as measured by EDX). Films created at 0.8 J cm(-2) exhibited generally poor stoichiometry and mechanical properties. Optimal conditions and stoichiometric transport were found for d(T-S) = 6 cm and 13 Pa of Ar. XRD shows that the films were nanocrystalline with CoSb3 structure. Grain size was in the range of similar to 50-80 nm.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA13-33056S" target="_blank" >GA13-33056S: Charakterizace tenkých termoelektrických vrstev a multi-vrstevnatých struktur pomocí rastrovacího termálního mikroskopu a Harmanovy metody.</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics A - Materials Science & Processing

ISSN

0947-8396

e-ISSN

—

Svazek periodika

122

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

5

Strana od-do

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Kód UT WoS článku

000371041700014

EID výsledku v databázi Scopus

2-s2.0-85007236144