Subbandgap absorption spectroscopy of thin film photovoltaic materials
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00480289" target="_blank" >RIV/68378271:_____/16:00480289 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Subbandgap absorption spectroscopy of thin film photovoltaic materials
Popis výsledku v původním jazyce
Recent advance in the hydrogenated amorphous silicon technology and the Fourier-transform Photocurrent Spectroscopy are reviewed, including the problem of parasitic absorptance due to the surface states. A new practice of the absolute scaling of the subbandgap photocurrent signal measured on solar cells is proposed, allowing absolute determination of bulk defect density in ppm. This approach is verified by ray tracing optical simulations. In order to give practical interpretation of defect concentration in terms of device performance, a series of hydrogenated amorphous silicon solar cells of different thickness was analyzed at different states of light soaking degradation. A map of maximum attainable voltage for given bandgap and combination of thickness and defect density is presented. An interesting fundamental rule is observed: the slope of the dependence of the voltage on the logarithm of the defect density corresponds to the Urbach energy.n
Název v anglickém jazyce
Subbandgap absorption spectroscopy of thin film photovoltaic materials
Popis výsledku anglicky
Recent advance in the hydrogenated amorphous silicon technology and the Fourier-transform Photocurrent Spectroscopy are reviewed, including the problem of parasitic absorptance due to the surface states. A new practice of the absolute scaling of the subbandgap photocurrent signal measured on solar cells is proposed, allowing absolute determination of bulk defect density in ppm. This approach is verified by ray tracing optical simulations. In order to give practical interpretation of defect concentration in terms of device performance, a series of hydrogenated amorphous silicon solar cells of different thickness was analyzed at different states of light soaking degradation. A map of maximum attainable voltage for given bandgap and combination of thickness and defect density is presented. An interesting fundamental rule is observed: the slope of the dependence of the voltage on the logarithm of the defect density corresponds to the Urbach energy.n
Klasifikace
Druh
O - Ostatní výsledky
CEP obor
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OECD FORD obor
21001 - Nano-materials (production and properties)
Návaznosti výsledku
Projekt
<a href="/cs/project/LD14011" target="_blank" >LD14011: Elektronické a optické vlastnosti hybridních nanostruktur</a><br>
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2016
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů