Subbandgap absorption spectroscopy of solar cell materials

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00236705" target="_blank" >RIV/68407700:21230/15:00236705 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Subbandgap absorption spectroscopy of solar cell materials

Popis výsledku v původním jazyce

Recent advance in the hydrogenated amorphous silicon technology and the Fourier-transform Photocurrent Spec-troscopy are reviewed, including the problem of parasitic absorptance of the surface states. A new way of the abso-lute scaling of the subbandgapphotocurrent signal meas-ured on solar cells is proposed, allowing absolute deter-mination of bulk defect density in ppm. This approach is verified by ray tracing optical simulations. In order to give practical interpretation of defect concentration in terms of device performance, a series of hydrogenated amorphous silicon solar cells of different thickness was analyzed at different states of light soaking degradation. A map of maximum attainable voltage for given bandgap and combination of thickness and defect density is shown.

Název v anglickém jazyce

Subbandgap absorption spectroscopy of solar cell materials

Popis výsledku anglicky

Recent advance in the hydrogenated amorphous silicon technology and the Fourier-transform Photocurrent Spec-troscopy are reviewed, including the problem of parasitic absorptance of the surface states. A new way of the abso-lute scaling of the subbandgapphotocurrent signal meas-ured on solar cells is proposed, allowing absolute deter-mination of bulk defect density in ppm. This approach is verified by ray tracing optical simulations. In order to give practical interpretation of defect concentration in terms of device performance, a series of hydrogenated amorphous silicon solar cells of different thickness was analyzed at different states of light soaking degradation. A map of maximum attainable voltage for given bandgap and combination of thickness and defect density is shown.

Druh

O - Ostatní výsledky

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů