Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00473944" target="_blank" >RIV/68378271:_____/17:00473944 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.apsusc.2016.06.105" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2016.06.105</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2016.06.105" target="_blank" >10.1016/j.apsusc.2016.06.105</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment

Popis výsledku v původním jazyce

We report on the investigation of low temperature (300 degrees C) hydrogen plasma treatment influence on the AlGaN/GaN heterostructures. This issue was raised in the frame of study on processes related to hybrid integration of diamond with GaN-based devices. At the same time, the capabilities of thin SiNx covering were investigated. The samples were exposed to low pressure hydrogen plasma ignited in the linear plasma system at low temperature. We analyze the surface morphology of samples by scanning electron microscopy while microstructural changes down to AlGaN/GaN interface were studied using secondary ion mass spectrometry. The sheet resistance, monitored using circular transmission line measurements, increases more than 3.5 times after 60 min treatment. The basic transport properties of the fabricated circular high electron mobility transistors after H-2 plasma treatment were analyzed. The sheet resistance increasing was attributed to the decrease of effective mobility. Whilst, the observed Schottky barrier lowering indicates necessity of gate contact protection.

Název v anglickém jazyce

Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment

Popis výsledku anglicky

We report on the investigation of low temperature (300 degrees C) hydrogen plasma treatment influence on the AlGaN/GaN heterostructures. This issue was raised in the frame of study on processes related to hybrid integration of diamond with GaN-based devices. At the same time, the capabilities of thin SiNx covering were investigated. The samples were exposed to low pressure hydrogen plasma ignited in the linear plasma system at low temperature. We analyze the surface morphology of samples by scanning electron microscopy while microstructural changes down to AlGaN/GaN interface were studied using secondary ion mass spectrometry. The sheet resistance, monitored using circular transmission line measurements, increases more than 3.5 times after 60 min treatment. The basic transport properties of the fabricated circular high electron mobility transistors after H-2 plasma treatment were analyzed. The sheet resistance increasing was attributed to the decrease of effective mobility. Whilst, the observed Schottky barrier lowering indicates necessity of gate contact protection.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GP14-16549P" target="_blank" >GP14-16549P: Ladění elektrických vlastností hybridních struktur diamantu a galium nitridu řízenou optimalizací vnitřních pnutí</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

395

Číslo periodika v rámci svazku

Feb

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

92-97

Kód UT WoS článku

000390428300016

EID výsledku v databázi Scopus

2-s2.0-84979695304