Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00474047" target="_blank" >RIV/68378271:_____/17:00474047 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2016.11.110" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2016.11.110</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2016.11.110" target="_blank" >10.1016/j.jcrysgro.2016.11.110</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
Popis výsledku v původním jazyce
InAs/GaAs QD HS with different covering layers (CLs) prepared by MOVPE are compared. The recombination energy of a structure covered only by GaAs depends nonlinearly on CL thickness. Experimental data of PL were supported by theoretical simulations. These simulations prove that the strain plays a major role. Due to the strain reduction, the recombination energy is decreased, so the structure has longer PL wavelength. By theoretical simulations it was shown that for high content of In in InGaAs covering layer (45% and more), the heterostructure is type II, which would normally be unreachable for flat layers. For the structure with GaAsSb SRL, the band alignment is highly dependent on the SRL composition. The type I/type II transition occurs for approximately 15% of Sb, this value also slightly depends on the QD size. All structures were also studied by HRTEM to show different behavior of the CLs on the interface with InAs which highly influences the structure quality.
Název v anglickém jazyce
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
Popis výsledku anglicky
InAs/GaAs QD HS with different covering layers (CLs) prepared by MOVPE are compared. The recombination energy of a structure covered only by GaAs depends nonlinearly on CL thickness. Experimental data of PL were supported by theoretical simulations. These simulations prove that the strain plays a major role. Due to the strain reduction, the recombination energy is decreased, so the structure has longer PL wavelength. By theoretical simulations it was shown that for high content of In in InGaAs covering layer (45% and more), the heterostructure is type II, which would normally be unreachable for flat layers. For the structure with GaAsSb SRL, the band alignment is highly dependent on the SRL composition. The type I/type II transition occurs for approximately 15% of Sb, this value also slightly depends on the QD size. All structures were also studied by HRTEM to show different behavior of the CLs on the interface with InAs which highly influences the structure quality.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
<a href="/cs/project/LO1603" target="_blank" >LO1603: Centrum technologie a pokročilé strukturní analýzy aplikačně významných materiálů</a><br>
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2017
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Crystal Growth
ISSN
0022-0248
e-ISSN
—
Svazek periodika
464
Číslo periodika v rámci svazku
Apr
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
5
Strana od-do
59-63
Kód UT WoS článku
000398873500011
EID výsledku v databázi Scopus
2-s2.0-85015385142