InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00492160" target="_blank" >RIV/68378271:_____/18:00492160 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1002/pssb.201700464" target="_blank" >http://dx.doi.org/10.1002/pssb.201700464</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssb.201700464" target="_blank" >10.1002/pssb.201700464</a>

Jazyk výsledku

angličtina

Název v původním jazyce

InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties

Popis výsledku v původním jazyce

Luminescence results on InGaN/GaN MQW structures with 10 and 30QWs were obtained. The aim is to increase the intensity of faster blue QW emission and decrease the luminescence of the QW defect band, showing a slower luminescence decay time, which is undesired for fast scintillator applications. We demonstrate that increasing the number of InGaN QWs is an efficient method to reach this goal. The luminescence improvement of the sample with higher number of QWs is explained by the influence of the increased size of V-pits with increased QW number. Thinner QWs on the side wall of V-pits serve as barriers which separate carriers from dislocations penetrating through the V-pit centre, supressing thus the non-radiative and radiative recombination on defects. Based on cathodoluminescence (CL) results, the scintillator structure design is discussed. Scintillator structures with higher number of QWs can take advantage of both, improved luminescence efficiency and thicker active region.

Název v anglickém jazyce

InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties

Popis výsledku anglicky

Luminescence results on InGaN/GaN MQW structures with 10 and 30QWs were obtained. The aim is to increase the intensity of faster blue QW emission and decrease the luminescence of the QW defect band, showing a slower luminescence decay time, which is undesired for fast scintillator applications. We demonstrate that increasing the number of InGaN QWs is an efficient method to reach this goal. The luminescence improvement of the sample with higher number of QWs is explained by the influence of the increased size of V-pits with increased QW number. Thinner QWs on the side wall of V-pits serve as barriers which separate carriers from dislocations penetrating through the V-pit centre, supressing thus the non-radiative and radiative recombination on defects. Based on cathodoluminescence (CL) results, the scintillator structure design is discussed. Scintillator structures with higher number of QWs can take advantage of both, improved luminescence efficiency and thicker active region.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi B-Basic Solid State Physics

ISSN

0370-1972

e-ISSN

—

Svazek periodika

255

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

5

Strana od-do

—

Kód UT WoS článku

000432028400021

EID výsledku v databázi Scopus

2-s2.0-85038810143