Paramagnetic defects in amorphous hydrogenated silicon carbide and silicon carbonitride films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00499912" target="_blank" >RIV/68378271:_____/18:00499912 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.2174/9781681086934118010016" target="_blank" >http://dx.doi.org/10.2174/9781681086934118010016</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.2174/9781681086934118010016" target="_blank" >10.2174/9781681086934118010016</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Paramagnetic defects in amorphous hydrogenated silicon carbide and silicon carbonitride films

Popis výsledku v původním jazyce

In this chapter, the nature of the defects and their relation to the incorporation of carbon, hydrogen, nitrogen and thermal treatment were investigated by electron paramagnetic resonance (EPR) spectroscopy for the fundamental insight of the electronic, optical and magnetic characteristics of the amorphous hydrogenated carbonrich silicon-carbon (a-Si1-xCx:H) and amorphous silicon carbonitride (a-SiCxNy) thin films. The paramagnetic defects due to the silicon dangling bonds (SiDBs), carbonrelated defects (CRDs) and K-center with Si-N2Si configuration were revealed in a-Si1-xCx:H films. The observed strong rise of the CRD spin density in annealed a-Si1-xCx:H films is caused by the hydrogen effusion process that takes place at Tann > 400°C.n

Název v anglickém jazyce

Paramagnetic defects in amorphous hydrogenated silicon carbide and silicon carbonitride films

Popis výsledku anglicky

In this chapter, the nature of the defects and their relation to the incorporation of carbon, hydrogen, nitrogen and thermal treatment were investigated by electron paramagnetic resonance (EPR) spectroscopy for the fundamental insight of the electronic, optical and magnetic characteristics of the amorphous hydrogenated carbonrich silicon-carbon (a-Si1-xCx:H) and amorphous silicon carbonitride (a-SiCxNy) thin films. The paramagnetic defects due to the silicon dangling bonds (SiDBs), carbonrelated defects (CRDs) and K-center with Si-N2Si configuration were revealed in a-Si1-xCx:H films. The observed strong rise of the CRD spin density in annealed a-Si1-xCx:H films is caused by the hydrogen effusion process that takes place at Tann > 400°C.n

Druh

C - Kapitola v odborné knize

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název knihy nebo sborníku

Frontiers in magnetic resonance

ISBN

978-1-68108-694-1

Počet stran výsledku

29

Strana od-do

251-282

Počet stran knihy

302

Název nakladatele

Bentham Science Publishers Ltd.

Místo vydání

Sharjah

Kód UT WoS kapitoly

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