Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00511336" target="_blank" >RIV/68378271:_____/19:00511336 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1002/pssa.201900241" target="_blank" >https://doi.org/10.1002/pssa.201900241</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssa.201900241" target="_blank" >10.1002/pssa.201900241</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond

Popis výsledku v původním jazyce

Hydrogenated amorphous substoichiometric silicon carbide (a-Si1-xCx:H) thin films and diodes with low carbon content were prepared from a mixture of H2, SiH4 and CH4 by plasma enhanced chemical vapour deposition at a relatively high temperature of 450C on semi-transparent conductive boron-doped nanocrystalline diamond (B-NCD) with an underlying Ti grid. Vibration spectra indicate that CH4 prevents Si crystallization and confirms an increasing carbon content up to x=0.1 for samples grown with SiH4/CH4 flows up to 1:3. Dark current-voltage characteristics of B-NCD/a-Si1-xCx:H diodes show a rectifying ratio of about four orders at ±1 V. However, under white light illumination an energy conversion efficiency of 4% is limited by a low fill factor, the high serial resistivity of B-NCD electrode and the s-shape near the open circuit voltage.n

Název v anglickém jazyce

Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond

Popis výsledku anglicky

Hydrogenated amorphous substoichiometric silicon carbide (a-Si1-xCx:H) thin films and diodes with low carbon content were prepared from a mixture of H2, SiH4 and CH4 by plasma enhanced chemical vapour deposition at a relatively high temperature of 450C on semi-transparent conductive boron-doped nanocrystalline diamond (B-NCD) with an underlying Ti grid. Vibration spectra indicate that CH4 prevents Si crystallization and confirms an increasing carbon content up to x=0.1 for samples grown with SiH4/CH4 flows up to 1:3. Dark current-voltage characteristics of B-NCD/a-Si1-xCx:H diodes show a rectifying ratio of about four orders at ±1 V. However, under white light illumination an energy conversion efficiency of 4% is limited by a low fill factor, the high serial resistivity of B-NCD electrode and the s-shape near the open circuit voltage.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi. A

ISSN

1862-6300

e-ISSN

—

Svazek periodika

216

Číslo periodika v rámci svazku

21

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

6

Strana od-do

1-6

Kód UT WoS článku

000483266600001

EID výsledku v databázi Scopus

2-s2.0-85071032379