Highly conductive and broadband transparent Zr-doped In2O3 as front electrode for solar cells

Kód výsledku v IS VaVaI

RIV/68378271:_____/18:00500632 - isvavai.cz

Nalezeny alternativní kódy

RIV/68407700:21230/18:00322497

Výsledek na webu

http://dx.doi.org/10.1109/JPHOTOV.2018.2851306

DOI - Digital Object Identifier

10.1109/JPHOTOV.2018.2851306

Jazyk výsledku

angličtina

Název v původním jazyce

Highly conductive and broadband transparent Zr-doped In2O3 as front electrode for solar cells

Popis výsledku v původním jazyce

Broadband transparent and highly conducting electrodes are key to avoid parasitic absorption and electrical losses in solar cells. Here, we propose zirconium-doped indium oxide (IO:Zr) as the front electrode in silicon heterojunction (SHJ) solar cells. The exceptional properties of this material rely on the combination of high-doping and high electron mobilities, achieving with this a wide optical band gap (3.5–4 eV), low free carrier absorption, and high lateral conductivity. A single film of IO:Zr has an electron mobility of 100 cm^2/Vs with a carrier density of 2.5–3x10^20 cm^-3, resulting in a sheet resistance of around 25 Ω/sq for 100-nm-thick films. Their implementation as a front electrode in SHJ solar cells results in an important gain in current density as compared to the standardly used Sn-doped indium oxide. SHJ devices with the optimized IO:Zr front electrode, resulting in current densities of 40 mA/cm2, a fill factor of 80%, and a conversion efficiency of 23.4%.

Název v anglickém jazyce

Highly conductive and broadband transparent Zr-doped In2O3 as front electrode for solar cells

Popis výsledku anglicky

Broadband transparent and highly conducting electrodes are key to avoid parasitic absorption and electrical losses in solar cells. Here, we propose zirconium-doped indium oxide (IO:Zr) as the front electrode in silicon heterojunction (SHJ) solar cells. The exceptional properties of this material rely on the combination of high-doping and high electron mobilities, achieving with this a wide optical band gap (3.5–4 eV), low free carrier absorption, and high lateral conductivity. A single film of IO:Zr has an electron mobility of 100 cm^2/Vs with a carrier density of 2.5–3x10^20 cm^-3, resulting in a sheet resistance of around 25 Ω/sq for 100-nm-thick films. Their implementation as a front electrode in SHJ solar cells results in an important gain in current density as compared to the standardly used Sn-doped indium oxide. SHJ devices with the optimized IO:Zr front electrode, resulting in current densities of 40 mA/cm2, a fill factor of 80%, and a conversion efficiency of 23.4%.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

GA18-24268S: Manipulace vlastností rozhraní oxidů přechodových kovů

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Journal of Photovoltaics

ISSN

2156-3381

e-ISSN

—

Svazek periodika

8

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

1202-1207

Kód UT WoS článku

000442366400006

EID výsledku v databázi Scopus

2-s2.0-85049833869