Comparative study of catalyst-induced doping and metal incorporation in silicon nanowires

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00521379" target="_blank" >RIV/68378271:_____/19:00521379 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1063/1.5086617" target="_blank" >https://doi.org/10.1063/1.5086617</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.5086617" target="_blank" >10.1063/1.5086617</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Comparative study of catalyst-induced doping and metal incorporation in silicon nanowires

Popis výsledku v původním jazyce

Foreign atoms incorporated into the crystal structure of a semiconductor have profound effects on the electronic structure and chargetransport in the material, particularly in nanoscale systems. Here, we demonstrate that catalyst-induced doping of silicon nanowires (SiNWs)can be used as an effective way for controlling dopant density and electrical conductivity in SiNWs, allowing the construction of p-n junc-tions. We investigate and compare metal incorporation and charge transport in SiNWs grown by six different metal catalysts (In, Sn, Bi, Ga,Pb, and Au) in plasma-enhanced chemical vapor deposition. The distribution of the catalytic metals within SiNWs was mapped by scanningtransmission electron microscopy using high-angle annular dark-field imaging. The metals are either homogenously distributed or segregatedin clusters on the surface or in the core of the nanowires, depending on the metal catalyst used. Each of the metal catalysts is found to play aunique role in the charge transport of SiNWs. Sn, Pb, and Au yield semiconducting SiNWs, Ga and In produce p-type self-doped SiNWs,and Bi catalyzes n-type self-doped SiNWs. A combination of these different nanowires may provide a bottom-up growth strategy for fabrica-tion of different nanowire-based electronic components

Název v anglickém jazyce

Comparative study of catalyst-induced doping and metal incorporation in silicon nanowires

Popis výsledku anglicky

Foreign atoms incorporated into the crystal structure of a semiconductor have profound effects on the electronic structure and chargetransport in the material, particularly in nanoscale systems. Here, we demonstrate that catalyst-induced doping of silicon nanowires (SiNWs)can be used as an effective way for controlling dopant density and electrical conductivity in SiNWs, allowing the construction of p-n junc-tions. We investigate and compare metal incorporation and charge transport in SiNWs grown by six different metal catalysts (In, Sn, Bi, Ga,Pb, and Au) in plasma-enhanced chemical vapor deposition. The distribution of the catalytic metals within SiNWs was mapped by scanningtransmission electron microscopy using high-angle annular dark-field imaging. The metals are either homogenously distributed or segregatedin clusters on the surface or in the core of the nanowires, depending on the metal catalyst used. Each of the metal catalysts is found to play aunique role in the charge transport of SiNWs. Sn, Pb, and Au yield semiconducting SiNWs, Ga and In produce p-type self-doped SiNWs,and Bi catalyzes n-type self-doped SiNWs. A combination of these different nanowires may provide a bottom-up growth strategy for fabrica-tion of different nanowire-based electronic components

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

—

Svazek periodika

114

Číslo periodika v rámci svazku

13

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

1-5

Kód UT WoS článku

000463657000015

EID výsledku v databázi Scopus

2-s2.0-85063785639