Optoelectronic properties of thin film amorphous hydrogenated silicon carbide diodes deposited on transparent boron-doped diamond

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Optoelectronic properties of thin film amorphous hydrogenated silicon carbide diodes deposited on transparent boron-doped diamond

Popis výsledku v původním jazyce

We developed thin film diode structures based on thin film a-SiC:H prepared by plasma enhanced chemical vapor deposition at a relatively high temperature on transparent conductive boron-doped diamond (BDD) with an underlying Ti grid. The optical absorption of the BDD/Ti electrode is about 10% in a broad spectral range and the sheet resistivity about 100 /sq. The diodes have been characterized by photocurrent, photoluminescence, Raman and electroluminescence spectroscopy, as well as optical absorption spectroscopy in the visible, near infrared and mid infrared regions. Diodes show a relatively high optical transparency in the near infrared region, a dark current rectifying ratio of more than 4 orders at ±1.5 V, short photocurrent density 15 mA/cm2 and an energy conversion efficiency of 4%.

Název v anglickém jazyce

Optoelectronic properties of thin film amorphous hydrogenated silicon carbide diodes deposited on transparent boron-doped diamond

Popis výsledku anglicky

We developed thin film diode structures based on thin film a-SiC:H prepared by plasma enhanced chemical vapor deposition at a relatively high temperature on transparent conductive boron-doped diamond (BDD) with an underlying Ti grid. The optical absorption of the BDD/Ti electrode is about 10% in a broad spectral range and the sheet resistivity about 100 /sq. The diodes have been characterized by photocurrent, photoluminescence, Raman and electroluminescence spectroscopy, as well as optical absorption spectroscopy in the visible, near infrared and mid infrared regions. Diodes show a relatively high optical transparency in the near infrared region, a dark current rectifying ratio of more than 4 orders at ±1.5 V, short photocurrent density 15 mA/cm2 and an energy conversion efficiency of 4%.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů