High temperature PIN diodes based on amorphous hydrogenated silicon carbide and boron-doped diamond thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00522073" target="_blank" >RIV/68378271:_____/19:00522073 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

High temperature PIN diodes based on amorphous hydrogenated silicon carbide and boron-doped diamond thin films

Popis výsledku v původním jazyce

The novel a-SiC:H diode structures on transparent conductive boron-doped diamond (BDD), have been deposited by the PECVD. The future of in-situ integration of nanoparticles and quantum dots in thin film structures for optoelectronic applications requires deposition temperatures above 400C. On the boron-doped diamond were deposited thin film PIN structure on the base of a-SiC:H. The layers have been studied by the SEM, temperature resolved electrical conductivity, optical absorptance, photocurrent and PL spectroscopy. The BDD/a-SiC:H diodes have been characterized by I-V measurement and by EL spectroscopyn

Název v anglickém jazyce

High temperature PIN diodes based on amorphous hydrogenated silicon carbide and boron-doped diamond thin films

Popis výsledku anglicky

The novel a-SiC:H diode structures on transparent conductive boron-doped diamond (BDD), have been deposited by the PECVD. The future of in-situ integration of nanoparticles and quantum dots in thin film structures for optoelectronic applications requires deposition temperatures above 400C. On the boron-doped diamond were deposited thin film PIN structure on the base of a-SiC:H. The layers have been studied by the SEM, temperature resolved electrical conductivity, optical absorptance, photocurrent and PL spectroscopy. The BDD/a-SiC:H diodes have been characterized by I-V measurement and by EL spectroscopyn

Druh

O - Ostatní výsledky

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů