High-temperature PIN diodes based on amorphous hydrogenated silicon-carbon alloys and boron-doped diamond thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00536230" target="_blank" >RIV/68378271:_____/20:00536230 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1002/pssb.201900247" target="_blank" >https://doi.org/10.1002/pssb.201900247</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssb.201900247" target="_blank" >10.1002/pssb.201900247</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High-temperature PIN diodes based on amorphous hydrogenated silicon-carbon alloys and boron-doped diamond thin films

Popis výsledku v původním jazyce

a-SiC:H diode structures with different ratios of Si:C on transparent conductive boron-doped diamond coated fused silica substrates, have been deposited by plasma enhanced chemical vapour deposition. Boron-doped diamond thin films were deposited at temperature 720 °C on fused silica substrates with a Ti grid used to enhance electrical conductivity. a-SiC:H PIN diodes have been characterised by current-voltage measurements under AM1.5 illumination. For comparison, we deposited the same PIN structures on fluorine-doped tin oxide. Before deposition of the diode structures the surface morphology was studied by scanning electron microscopy, undoped layers deposited on the quartz substrates have been characterised by temperature resolved electrical resistivity, optical absorptance, Raman spectroscopy and photoluminescence.n

Název v anglickém jazyce

High-temperature PIN diodes based on amorphous hydrogenated silicon-carbon alloys and boron-doped diamond thin films

Popis výsledku anglicky

a-SiC:H diode structures with different ratios of Si:C on transparent conductive boron-doped diamond coated fused silica substrates, have been deposited by plasma enhanced chemical vapour deposition. Boron-doped diamond thin films were deposited at temperature 720 °C on fused silica substrates with a Ti grid used to enhance electrical conductivity. a-SiC:H PIN diodes have been characterised by current-voltage measurements under AM1.5 illumination. For comparison, we deposited the same PIN structures on fluorine-doped tin oxide. Before deposition of the diode structures the surface morphology was studied by scanning electron microscopy, undoped layers deposited on the quartz substrates have been characterised by temperature resolved electrical resistivity, optical absorptance, Raman spectroscopy and photoluminescence.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi B-Basic Solid State Physics

ISSN

0370-1972

e-ISSN

—

Svazek periodika

257

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

6

Strana od-do

1-6

Kód UT WoS článku

000527079000001

EID výsledku v databázi Scopus

2-s2.0-85083660309