The metallic nanoparticles integrated into thin layers of hydrogenated amorphous silicon

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00522068" target="_blank" >RIV/68378271:_____/19:00522068 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

The metallic nanoparticles integrated into thin layers of hydrogenated amorphous silicon

Popis výsledku v původním jazyce

The metallic nanoparticles integrated into thin semiconductor layer to increase the optical absorption below the optical absorption edge in the near infrared region are expected to significantly degrade the electronic quality of the semiconductor due to the recombination centers introduced in the energy band gap. Contrary to these expectations, our new measurements on PIN structures indicates only meager impact of embedded NPs on the current - voltage characteristics. Here we present our novel PIN structures based on a-Si:H thin films with embedded Sn NPs characterized by electron microscopy (SEM and HRTEM), atomic force microscopy (AFM), photothermal deflection spectroscopy (PDS), constant photocurrent method (CPM), photoluminescence (PL) and electroluminescence (EL). The temperature dependence of the electrical conductivity and the changes of its activation energy are discussed in the frame of the theoretical model of the transfer of the charge carriers in these structures.n

Název v anglickém jazyce

The metallic nanoparticles integrated into thin layers of hydrogenated amorphous silicon

Popis výsledku anglicky

The metallic nanoparticles integrated into thin semiconductor layer to increase the optical absorption below the optical absorption edge in the near infrared region are expected to significantly degrade the electronic quality of the semiconductor due to the recombination centers introduced in the energy band gap. Contrary to these expectations, our new measurements on PIN structures indicates only meager impact of embedded NPs on the current - voltage characteristics. Here we present our novel PIN structures based on a-Si:H thin films with embedded Sn NPs characterized by electron microscopy (SEM and HRTEM), atomic force microscopy (AFM), photothermal deflection spectroscopy (PDS), constant photocurrent method (CPM), photoluminescence (PL) and electroluminescence (EL). The temperature dependence of the electrical conductivity and the changes of its activation energy are discussed in the frame of the theoretical model of the transfer of the charge carriers in these structures.n

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů