Model of carrier multiplication due to impurity impact ionization in boron-doped diamond

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00522082" target="_blank" >RIV/68378271:_____/19:00522082 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/19:00331253 RIV/68407700:21460/19:00331253

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Model of carrier multiplication due to impurity impact ionization in boron-doped diamond

Popis výsledku v původním jazyce

Boron-doped diamond exhibits a characteristic S-shaped I-V curve at room temperature [1] with two electrical conductivity states, i.e., low and high conductivity, at high electric fields (50 – 250 kV.cm-1) due to the carrier freeze-out and impurity impact ionization avalanche effect. To our knowledge, the carrier multiplication during the change of the conductivity state has not been studied. In this article, we investigate theoretically the effect of acceptor concentration and compensation level on the carrier multiplication coefficient at room temperature to determine the optimal dopants concentration of maximum carrier multiplication. The room temperature hole concentration of boron-doped diamond has been calculated for various acceptor concentration and compensation ratio by solving numerically the charge neutrality equation within the Boltzmann approximation of the Fermi-Dirac statistic.n

Název v anglickém jazyce

Model of carrier multiplication due to impurity impact ionization in boron-doped diamond

Popis výsledku anglicky

Boron-doped diamond exhibits a characteristic S-shaped I-V curve at room temperature [1] with two electrical conductivity states, i.e., low and high conductivity, at high electric fields (50 – 250 kV.cm-1) due to the carrier freeze-out and impurity impact ionization avalanche effect. To our knowledge, the carrier multiplication during the change of the conductivity state has not been studied. In this article, we investigate theoretically the effect of acceptor concentration and compensation level on the carrier multiplication coefficient at room temperature to determine the optimal dopants concentration of maximum carrier multiplication. The room temperature hole concentration of boron-doped diamond has been calculated for various acceptor concentration and compensation ratio by solving numerically the charge neutrality equation within the Boltzmann approximation of the Fermi-Dirac statistic.n

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA17-05259S" target="_blank" >GA17-05259S: Elektronické vlastnosti dopovaného diamantu ve vysokých elektrických polí</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./

ISBN

978-80-87294-89-5

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

41-45

Název nakladatele

Tanger Ltd.

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

17. 10. 2018

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

000513131900006