Effect of a-Si on CH3NH3PbI3 films and applications in perovskite solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00540605" target="_blank" >RIV/68378271:_____/19:00540605 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/19:00340505 RIV/00216208:11320/19:10412841

Výsledek na webu

<a href="http://dx.doi.org/10.1109/PVSC40753.2019.8980569" target="_blank" >http://dx.doi.org/10.1109/PVSC40753.2019.8980569</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/PVSC40753.2019.8980569" target="_blank" >10.1109/PVSC40753.2019.8980569</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of a-Si on CH3NH3PbI3 films and applications in perovskite solar cells

Popis výsledku v původním jazyce

The effect of PECVD deposition of amorphous Silicon on perovskite layers, and perovskite layers prepared on pre-deposited a-Si are investigated in the interest of determining the interaction between the two materials and developing a-Si as a material for direct integration into perovskite cells. This may include as selective contacts or carrier transport layers, an encapsulation material, or in other ways. Doped and intrinsic a-Si layers are deposited at a range of temperatures, with the resulting structures characterized by methods including photoluminescence, SEM imaging, absorption, resistivity measurements, and degradation rate. Comparisons are made to layers deposited on glass without any PECVD deposition carried out and layers subjected to heating without PECVD deposition. The implications for use of a-Si in perovskite cells are explored.n

Název v anglickém jazyce

Effect of a-Si on CH3NH3PbI3 films and applications in perovskite solar cells

Popis výsledku anglicky

The effect of PECVD deposition of amorphous Silicon on perovskite layers, and perovskite layers prepared on pre-deposited a-Si are investigated in the interest of determining the interaction between the two materials and developing a-Si as a material for direct integration into perovskite cells. This may include as selective contacts or carrier transport layers, an encapsulation material, or in other ways. Doped and intrinsic a-Si layers are deposited at a range of temperatures, with the resulting structures characterized by methods including photoluminescence, SEM imaging, absorption, resistivity measurements, and degradation rate. Comparisons are made to layers deposited on glass without any PECVD deposition carried out and layers subjected to heating without PECVD deposition. The implications for use of a-Si in perovskite cells are explored.n

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EF15_003%2F0000464" target="_blank" >EF15_003/0000464: Centrum pokročilé fotovoltaiky</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)

ISBN

978-1-7281-0494-2

ISSN

0160-8371

e-ISSN

—

Počet stran výsledku

5

Strana od-do

(2019)

Název nakladatele

IEEE

Místo vydání

New York

Místo konání akce

Chicago

Datum konání akce

16. 6. 2019

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000542034900096