High rate deposition of photoactive TiO2 films by hot hollow cathode
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00524998" target="_blank" >RIV/68378271:_____/20:00524998 - isvavai.cz</a>
Výsledek na webu
<a href="https://doi.org/10.1016/j.surfcoat.2019.125256" target="_blank" >https://doi.org/10.1016/j.surfcoat.2019.125256</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.surfcoat.2019.125256" target="_blank" >10.1016/j.surfcoat.2019.125256</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
High rate deposition of photoactive TiO2 films by hot hollow cathode
Popis výsledku v původním jazyce
In this paper we present a plasma deposition technique that allows the reactive deposition of oxide layers with extremely high deposition rate. The new approach combines reactive sputtering by DC hollow cathode discharge with thermal evaporation from the hot surface of the hollow cathode. As an example of successful fast deposition, photoactive films of titanium dioxide (TiO2) with various thicknesses were deposited using this technique. The uncooled titanium nozzle served as a hot hollow cathode and simultaneously as an inert gas (Ar) inlet. The reactive gas (O2) was introduced into the vacuum chamber through a separate inlet. During deposition, the temperature of the titanium hollow cathode reached up to 1600 °C, depending on the discharge parameters. This made it possible to combine the ion sputtering of hot titanium cathode with its thermal surface evaporation, which significantly increased the TiO2 deposition rate. The highest achieved deposition rate was 567 nm/min (34 μm/h), which (with respect to the geometry of this process) corresponds to total volume of the deposited TiO2 material 1.2 mm3/min per 1 kW of absorbed power. Despite extremely high thermal flux to the substrate, TiO2 films were successfully deposited even on temperature-sensitive PET foil. The as-deposited and post-annealed TiO2 films prepared on fluorine doped tin oxide (FTO) substrates and glass were subject to further analyses including X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and photoelectrochemical (PEC) measurements. Whereas the as-deposited TiO2 films had an amorphous (or nearly amorphous) structure, which exhibited only weak photoactivity, after annealing their PEC activity increased by an order of magnitude.
Název v anglickém jazyce
High rate deposition of photoactive TiO2 films by hot hollow cathode
Popis výsledku anglicky
In this paper we present a plasma deposition technique that allows the reactive deposition of oxide layers with extremely high deposition rate. The new approach combines reactive sputtering by DC hollow cathode discharge with thermal evaporation from the hot surface of the hollow cathode. As an example of successful fast deposition, photoactive films of titanium dioxide (TiO2) with various thicknesses were deposited using this technique. The uncooled titanium nozzle served as a hot hollow cathode and simultaneously as an inert gas (Ar) inlet. The reactive gas (O2) was introduced into the vacuum chamber through a separate inlet. During deposition, the temperature of the titanium hollow cathode reached up to 1600 °C, depending on the discharge parameters. This made it possible to combine the ion sputtering of hot titanium cathode with its thermal surface evaporation, which significantly increased the TiO2 deposition rate. The highest achieved deposition rate was 567 nm/min (34 μm/h), which (with respect to the geometry of this process) corresponds to total volume of the deposited TiO2 material 1.2 mm3/min per 1 kW of absorbed power. Despite extremely high thermal flux to the substrate, TiO2 films were successfully deposited even on temperature-sensitive PET foil. The as-deposited and post-annealed TiO2 films prepared on fluorine doped tin oxide (FTO) substrates and glass were subject to further analyses including X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and photoelectrochemical (PEC) measurements. Whereas the as-deposited TiO2 films had an amorphous (or nearly amorphous) structure, which exhibited only weak photoactivity, after annealing their PEC activity increased by an order of magnitude.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10305 - Fluids and plasma physics (including surface physics)
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2020
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Surface and Coatings Technology
ISSN
0257-8972
e-ISSN
—
Svazek periodika
383
Číslo periodika v rámci svazku
Feb
Stát vydavatele periodika
CH - Švýcarská konfederace
Počet stran výsledku
10
Strana od-do
1-10
Kód UT WoS článku
000509617000018
EID výsledku v databázi Scopus
2-s2.0-85076290354